caa a22 4500 463214773 CHVBK 20180405153153.0 cr unu---uuuuu 170326e20070201xx s 000 0 eng 10.1007/s00339-006-3747-1 doi (NATIONALLICENCE)springer-10.1007/s00339-006-3747-1 Einstein relation in chemically doped organic semiconductors [Elektronische Daten] [Y.-Q. Peng, J.-H. Yang, F.-P. Lu, Q.-S. Yang, H.-W. Xing, X.-S. Li, C.-A. Song] Based on the assumption of Gaussian energy distributions of the lowest unoccupied molecular orbital (LUMO) and the highest occupied molecular orbital (HOMO), analytical expressions of generalized Einstein relation in chemically doped organic semiconductor are developed, by approximation of Coulomb traps with a rectangle potential well. Numerical calculations show that traditional Einstein relations do not hold for chemically doped organic semiconductors. Similar to physical doping, the dependence of diffusion coefficient to mobility D/μ ratio on the carrier concentration has a maximum. An essential difference between chemical doping and physical doping is that, the D/μ ratio in chemically doped organic semiconductors depends not only on carrier concentration and doping concentration, but also on the applied electric field. Springer-Verlag, 2006 Peng Y.-Q Institute of Microelectronics, School of Physics Science and Technology, Lanzhou University, 730000, Lanzhou, P.R. China aut Yang J.-H Institute of Microelectronics, School of Physics Science and Technology, Lanzhou University, 730000, Lanzhou, P.R. China aut Lu F.-P Institute of Microelectronics, School of Physics Science and Technology, Lanzhou University, 730000, Lanzhou, P.R. China aut Yang Q.-S Institute of Microelectronics, School of Physics Science and Technology, Lanzhou University, 730000, Lanzhou, P.R. China aut Xing H.-W Institute of Microelectronics, School of Physics Science and Technology, Lanzhou University, 730000, Lanzhou, P.R. China aut Li X.-S Institute of Microelectronics, School of Physics Science and Technology, Lanzhou University, 730000, Lanzhou, P.R. China aut Song C.-A Institute of Microelectronics, School of Physics Science and Technology, Lanzhou University, 730000, Lanzhou, P.R. China aut Applied Physics A Springer-Verlag 86/2(2007-02-01), 225-229 0947-8396 86:2<225 2007 86 339 https://doi.org/10.1007/s00339-006-3747-1 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00339-006-3747-1 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Peng Y.-Q Institute of Microelectronics, School of Physics Science and Technology, Lanzhou University, 730000, Lanzhou, P.R. China aut NATIONALLICENCE 700 1- Yang J.-H Institute of Microelectronics, School of Physics Science and Technology, Lanzhou University, 730000, Lanzhou, P.R. China aut NATIONALLICENCE 700 1- Lu F.-P Institute of Microelectronics, School of Physics Science and Technology, Lanzhou University, 730000, Lanzhou, P.R. China aut NATIONALLICENCE 700 1- Yang Q.-S Institute of Microelectronics, School of Physics Science and Technology, Lanzhou University, 730000, Lanzhou, P.R. China aut NATIONALLICENCE 700 1- Xing H.-W Institute of Microelectronics, School of Physics Science and Technology, Lanzhou University, 730000, Lanzhou, P.R. China aut NATIONALLICENCE 700 1- Li X.-S Institute of Microelectronics, School of Physics Science and Technology, Lanzhou University, 730000, Lanzhou, P.R. China aut NATIONALLICENCE 700 1- Song C.-A Institute of Microelectronics, School of Physics Science and Technology, Lanzhou University, 730000, Lanzhou, P.R. China aut NATIONALLICENCE 773 0- Applied Physics A Springer-Verlag 86/2(2007-02-01), 225-229 0947-8396 86:2<225 2007 86 339 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer