caa a22 4500 463214978 CHVBK 20180405153153.0 cr unu---uuuuu 170326e20070401xx s 000 0 eng 10.1007/s00339-006-3851-2 doi (NATIONALLICENCE)springer-10.1007/s00339-006-3851-2 Si doping in Ge2Sb2Te5 film to reduce the writing current of phase change memory [Elektronische Daten] [J. Feng, Y. Zhang, B.W. Qiao, Y.F. Lai, Y.Y. Lin, B.C. Cai, T.A. Tang, B. Chen] The characteristics of phase change memory devices in size of several micrometers and with pure Ge2Sb2Te5 (GST), N-doped GST, and Si-doped GST films were investigated and compared with each other. The Si-doped GST device can perform SET and RESET cycles, even if the Si dopant is as small as 4.1at. %. But the GST and N-doped GST device cannot perform the RESET process, though the SET state resistance of N-doped device is almost the same as that of Si-doped device and larger than that of GST device. In order to explain this phenomenon, the electrical and DSC characteristics of three kinds of films were investigated. Phase separation was found in Si-doped GST films. The reason of the RESET ability of Si-doped GST devices is supposed to be the existence of rich Si phases which act as micro-heaters. Thermal conduction simulations confirmed this supposition and indicate that the separated high resistance phase (rich Si phase) can heat the active volume of device efficiently and reduce the writing current largely. Springer-Verlag, 2007 Feng J. National Key Laboratory of Nano/Micro Fabrication Technology, Key Laboratory for Thin Film and Microfabrication Technology of Ministry of Education, Institute of Micro/Nano Science and Technology, Shanghai Jiao Tong University, 200030, Shanghai, P.R. China aut Zhang Y. National Key Laboratory of Nano/Micro Fabrication Technology, Key Laboratory for Thin Film and Microfabrication Technology of Ministry of Education, Institute of Micro/Nano Science and Technology, Shanghai Jiao Tong University, 200030, Shanghai, P.R. China aut Qiao B.W. National Key Laboratory of Nano/Micro Fabrication Technology, Key Laboratory for Thin Film and Microfabrication Technology of Ministry of Education, Institute of Micro/Nano Science and Technology, Shanghai Jiao Tong University, 200030, Shanghai, P.R. China aut Lai Y.F. National Key Laboratory of Nano/Micro Fabrication Technology, Key Laboratory for Thin Film and Microfabrication Technology of Ministry of Education, Institute of Micro/Nano Science and Technology, Shanghai Jiao Tong University, 200030, Shanghai, P.R. China aut Lin Y.Y. State Key Laboratory of ASIC & System, Fudan University, 200433, Shanghai, P.R. China aut Cai B.C. National Key Laboratory of Nano/Micro Fabrication Technology, Key Laboratory for Thin Film and Microfabrication Technology of Ministry of Education, Institute of Micro/Nano Science and Technology, Shanghai Jiao Tong University, 200030, Shanghai, P.R. China aut Tang T.A. State Key Laboratory of ASIC & System, Fudan University, 200433, Shanghai, P.R. China aut Chen B. Silicon Storage Technology Inc, 1171 Sonora Court, 94086, Sunnyvale, CA, USA aut Applied Physics A Springer-Verlag 87/1(2007-04-01), 57-62 0947-8396 87:1<57 2007 87 339 https://doi.org/10.1007/s00339-006-3851-2 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00339-006-3851-2 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Feng J. National Key Laboratory of Nano/Micro Fabrication Technology, Key Laboratory for Thin Film and Microfabrication Technology of Ministry of Education, Institute of Micro/Nano Science and Technology, Shanghai Jiao Tong University, 200030, Shanghai, P.R. China aut NATIONALLICENCE 700 1- Zhang Y. National Key Laboratory of Nano/Micro Fabrication Technology, Key Laboratory for Thin Film and Microfabrication Technology of Ministry of Education, Institute of Micro/Nano Science and Technology, Shanghai Jiao Tong University, 200030, Shanghai, P.R. China aut NATIONALLICENCE 700 1- Qiao B.W. National Key Laboratory of Nano/Micro Fabrication Technology, Key Laboratory for Thin Film and Microfabrication Technology of Ministry of Education, Institute of Micro/Nano Science and Technology, Shanghai Jiao Tong University, 200030, Shanghai, P.R. China aut NATIONALLICENCE 700 1- Lai Y.F. National Key Laboratory of Nano/Micro Fabrication Technology, Key Laboratory for Thin Film and Microfabrication Technology of Ministry of Education, Institute of Micro/Nano Science and Technology, Shanghai Jiao Tong University, 200030, Shanghai, P.R. China aut NATIONALLICENCE 700 1- Lin Y.Y. State Key Laboratory of ASIC & System, Fudan University, 200433, Shanghai, P.R. China aut NATIONALLICENCE 700 1- Cai B.C. National Key Laboratory of Nano/Micro Fabrication Technology, Key Laboratory for Thin Film and Microfabrication Technology of Ministry of Education, Institute of Micro/Nano Science and Technology, Shanghai Jiao Tong University, 200030, Shanghai, P.R. China aut NATIONALLICENCE 700 1- Tang T.A. State Key Laboratory of ASIC & System, Fudan University, 200433, Shanghai, P.R. China aut NATIONALLICENCE 700 1- Chen B. Silicon Storage Technology Inc, 1171 Sonora Court, 94086, Sunnyvale, CA, USA aut NATIONALLICENCE 773 0- Applied Physics A Springer-Verlag 87/1(2007-04-01), 57-62 0947-8396 87:1<57 2007 87 339 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer