caa a22 4500 463215052 CHVBK 20180405153153.0 cr unu---uuuuu 170326e20070601xx s 000 0 eng 10.1007/s00339-007-3918-8 doi (NATIONALLICENCE)springer-10.1007/s00339-007-3918-8 Recent advances in MOCVD process technology for the growth of compound semiconductor devices [Elektronische Daten] [B. Schineller, M. Heuken] This paper gives an overview of the current state of the technology of metal-organic vapor phase epitaxy (MOVPE), which has established itself as the method of choice for the mass production of (opto)electronic semiconductor devices. The use of in situ reflectometry and emissivity corrected surface temperature measurement for the improvement of process yield is covered as well as recent advances in the growth on larger wafers. Employing novel methods of ex situ characterization to assess the bow of the sapphire wafer during growth, we achieved blue-emitting multi-quantum well (MQW) structures on 4inch substrates with 1.3nm standard deviation of the wavelength. It is shown that the thickness of the substrate as well as the off-cut of the sapphire surface must be taken into account and correctly matched. Springer-Verlag, 2007 Schineller B. AIXTRON AG, Kackertstrasse 15-17, 52072, Aachen, Germany aut Heuken M. AIXTRON AG, Kackertstrasse 15-17, 52072, Aachen, Germany aut Applied Physics A Springer-Verlag 87/3(2007-06-01), 479-483 0947-8396 87:3<479 2007 87 339 https://doi.org/10.1007/s00339-007-3918-8 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00339-007-3918-8 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Schineller B. AIXTRON AG, Kackertstrasse 15-17, 52072, Aachen, Germany aut NATIONALLICENCE 700 1- Heuken M. AIXTRON AG, Kackertstrasse 15-17, 52072, Aachen, Germany aut NATIONALLICENCE 773 0- Applied Physics A Springer-Verlag 87/3(2007-06-01), 479-483 0947-8396 87:3<479 2007 87 339 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer