caa a22 4500 463215060 CHVBK 20180405153153.0 cr unu---uuuuu 170326e20070601xx s 000 0 eng 10.1007/s00339-007-3910-3 doi (NATIONALLICENCE)springer-10.1007/s00339-007-3910-3 Characterization of electronic materials and devices by scanning near-field microscopy [Elektronische Daten] [L.J. Balk, R. Heiderhoff, J.C.H. Phang, Ch. Thomas] Due to the reduction of structure sizes in modern electronic devices reliable characterization techniques are required in the nanometer range. Since the comparable wavelengths in investigation methods are larger, near-field techniques have to be used for nano-inspection allowing sub-wavelength resolution. Also many microscopy methods with static fields imply near-field approaches. Analyzing several near-field approaches for fields and waves, a general concept for near-field description will be introduced which can be applied to various near-field interaction mechanisms. Based on scanning probe microscopy, different techniques are shown to determine locally miscellaneous properties which are important for modern electronic materials and devices. Springer-Verlag, 2007 Balk L.J. Fachbereich Elektrotechnik, Informationstechnik, Medientechnik, Lehrstuhl für Elektronik, Bergische Universität Wuppertal, Rainer-Gruenter-Straße 21, 42119, Wuppertal, Germany aut Heiderhoff R. Fachbereich Elektrotechnik, Informationstechnik, Medientechnik, Lehrstuhl für Elektronik, Bergische Universität Wuppertal, Rainer-Gruenter-Straße 21, 42119, Wuppertal, Germany aut Phang J.C.H. Department of Electrical and Computer Engineering, Centre for Integrated Circuit Failure Analysis and Reliability (CICFAR), National University of Singapore, 4 Engineering Drive 3, 117576, Singapore, Singapore aut Thomas Ch Fachbereich Elektrotechnik, Informationstechnik, Medientechnik, Lehrstuhl für Elektronik, Bergische Universität Wuppertal, Rainer-Gruenter-Straße 21, 42119, Wuppertal, Germany aut Applied Physics A Springer-Verlag 87/3(2007-06-01), 443-449 0947-8396 87:3<443 2007 87 339 https://doi.org/10.1007/s00339-007-3910-3 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00339-007-3910-3 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Balk L.J. Fachbereich Elektrotechnik, Informationstechnik, Medientechnik, Lehrstuhl für Elektronik, Bergische Universität Wuppertal, Rainer-Gruenter-Straße 21, 42119, Wuppertal, Germany aut NATIONALLICENCE 700 1- Heiderhoff R. Fachbereich Elektrotechnik, Informationstechnik, Medientechnik, Lehrstuhl für Elektronik, Bergische Universität Wuppertal, Rainer-Gruenter-Straße 21, 42119, Wuppertal, Germany aut NATIONALLICENCE 700 1- Phang J.C.H. Department of Electrical and Computer Engineering, Centre for Integrated Circuit Failure Analysis and Reliability (CICFAR), National University of Singapore, 4 Engineering Drive 3, 117576, Singapore, Singapore aut NATIONALLICENCE 700 1- Thomas Ch Fachbereich Elektrotechnik, Informationstechnik, Medientechnik, Lehrstuhl für Elektronik, Bergische Universität Wuppertal, Rainer-Gruenter-Straße 21, 42119, Wuppertal, Germany aut NATIONALLICENCE 773 0- Applied Physics A Springer-Verlag 87/3(2007-06-01), 443-449 0947-8396 87:3<443 2007 87 339 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer