caa a22 4500 463215168 CHVBK 20180405153154.0 cr unu---uuuuu 170326e20070601xx s 000 0 eng 10.1007/s00339-007-3911-2 doi (NATIONALLICENCE)springer-10.1007/s00339-007-3911-2 Optical anisotropy of cyclopentene terminated GaAs(001) surfaces [Elektronische Daten] [R. Passmann, M. Kropp, T. Bruhn, B.O. Fimland, F.L. Bloom, A.C. Gossard, W. Richter, N. Esser, P. Vogt] Up to now most of the experimental work regarding the adsorption of organic molecules has been concerned with silicon. Here we study the interface formation on a III-V-semiconductor, GaAs(001). We show that reflectance anisotropy spectroscopy (RAS) is a sensitive technique for investigating the interface formation between organic molecules and semiconductor surfaces. With RAS it is possible to determine the surface reconstruction and the structural changes at the interface during the deposition of organic molecules. These changes and the underlying adsorption process are discussed here for the adsorption of cyclopentene on GaAs(001)c(4×4), (2×4) and (4×2). Springer-Verlag, 2007 Passmann R. Institut für Festkörperphysik, TU Berlin, Hardenbergstr. 36, 10623, Berlin, Germany aut Kropp M. Institut für Festkörperphysik, TU Berlin, Hardenbergstr. 36, 10623, Berlin, Germany aut Bruhn T. Institut für Festkörperphysik, TU Berlin, Hardenbergstr. 36, 10623, Berlin, Germany aut Fimland B.O. Department of Electronics and Telecommunication, Norwegian University of Science and Technology, 7491, Trondheim, Norway aut Bloom F.L. Materials Department, University of California, 93106-5050, Santa Barbara, CA, USA aut Gossard A.C. Materials Department, University of California, 93106-5050, Santa Barbara, CA, USA aut Richter W. Institut für Festkörperphysik, TU Berlin, Hardenbergstr. 36, 10623, Berlin, Germany aut Esser N. Institut für Festkörperphysik, TU Berlin, Hardenbergstr. 36, 10623, Berlin, Germany aut Vogt P. Institut für Festkörperphysik, TU Berlin, Hardenbergstr. 36, 10623, Berlin, Germany aut Applied Physics A Springer-Verlag 87/3(2007-06-01), 469-473 0947-8396 87:3<469 2007 87 339 https://doi.org/10.1007/s00339-007-3911-2 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00339-007-3911-2 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Passmann R. Institut für Festkörperphysik, TU Berlin, Hardenbergstr. 36, 10623, Berlin, Germany aut NATIONALLICENCE 700 1- Kropp M. Institut für Festkörperphysik, TU Berlin, Hardenbergstr. 36, 10623, Berlin, Germany aut NATIONALLICENCE 700 1- Bruhn T. Institut für Festkörperphysik, TU Berlin, Hardenbergstr. 36, 10623, Berlin, Germany aut NATIONALLICENCE 700 1- Fimland B.O. Department of Electronics and Telecommunication, Norwegian University of Science and Technology, 7491, Trondheim, Norway aut NATIONALLICENCE 700 1- Bloom F.L. Materials Department, University of California, 93106-5050, Santa Barbara, CA, USA aut NATIONALLICENCE 700 1- Gossard A.C. Materials Department, University of California, 93106-5050, Santa Barbara, CA, USA aut NATIONALLICENCE 700 1- Richter W. Institut für Festkörperphysik, TU Berlin, Hardenbergstr. 36, 10623, Berlin, Germany aut NATIONALLICENCE 700 1- Esser N. Institut für Festkörperphysik, TU Berlin, Hardenbergstr. 36, 10623, Berlin, Germany aut NATIONALLICENCE 700 1- Vogt P. Institut für Festkörperphysik, TU Berlin, Hardenbergstr. 36, 10623, Berlin, Germany aut NATIONALLICENCE 773 0- Applied Physics A Springer-Verlag 87/3(2007-06-01), 469-473 0947-8396 87:3<469 2007 87 339 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer