caa a22 4500 463215192 CHVBK 20180405153154.0 cr unu---uuuuu 170326e20070601xx s 000 0 eng 10.1007/s00339-007-3905-0 doi (NATIONALLICENCE)springer-10.1007/s00339-007-3905-0 Electrochemical formation and properties of thin polyaniline films on Au(111) and p-Si(111) [Elektronische Daten] [L. Komsiyska, V. Tsakova, G. Staikov] The specific aspects of phase formation phenomena involved in electrodeposition of conducting polymer layers are critically discussed. The mechanism of formation and the properties of electrodeposited thin polyaniline (PANI) films on Au(111) and p-Si(111) are investigated by means of transient measurements, cyclic voltammetry, electrochemical impedance spectroscopy and atomic force microscopy (AFM). Experimental results show that the initial stages of PANI electrodeposition on Au(111) can be described by a model including progressive appearance and preferential 2D growth of polymer islands. The electropolymerization process on p-Si(111) substrates is preceded by anodic formation of an inhomogeneous thin SiO2 layer giving rise to a progressive appearance and growth of 3D PANI islands. The electrochemical redox properties of electrodeposited PANI films on p-Si(111) are influenced strongly by the electronic band structure of silicon. Springer-Verlag, 2007 Komsiyska L. Institute of Bio- and Nanosystems (IBN 3), and CNI-Centre of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425, Jülich, Germany aut Tsakova V. Institute of Physical Chemistry, Bulgarian Academy of Sciences, 1113, Sofia, Bulgaria aut Staikov G. Institute of Bio- and Nanosystems (IBN 3), and CNI-Centre of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425, Jülich, Germany aut Applied Physics A Springer-Verlag 87/3(2007-06-01), 405-409 0947-8396 87:3<405 2007 87 339 https://doi.org/10.1007/s00339-007-3905-0 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00339-007-3905-0 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Komsiyska L. Institute of Bio- and Nanosystems (IBN 3), and CNI-Centre of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425, Jülich, Germany aut NATIONALLICENCE 700 1- Tsakova V. Institute of Physical Chemistry, Bulgarian Academy of Sciences, 1113, Sofia, Bulgaria aut NATIONALLICENCE 700 1- Staikov G. Institute of Bio- and Nanosystems (IBN 3), and CNI-Centre of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425, Jülich, Germany aut NATIONALLICENCE 773 0- Applied Physics A Springer-Verlag 87/3(2007-06-01), 405-409 0947-8396 87:3<405 2007 87 339 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer