caa a22 4500 463215206 CHVBK 20180405153154.0 cr unu---uuuuu 170326e20070601xx s 000 0 eng 10.1007/s00339-007-3925-9 doi (NATIONALLICENCE)springer-10.1007/s00339-007-3925-9 Mönch W. Department of Physics, Universität Duisburg-Essen, 47048, Duisburg, Germany aut Some comments on the determination and interpretation of barrier heights of metal-semiconductor contacts [Elektronische Daten] [W. Mönch] The intrinsic interface-induced gap states are the fundamental theoretical concept which explains the band-structure lineup at all semiconductor interfaces. However, a comparison of experimental results and theoretical predictions requires data of well-characterized interfaces. With respect to the experimental input, two aspects are of importance. First, the evaluation of the measured data has to be performed critically and very carefully and, second, extrinsic and intrinsic effects have to be recognized and then separated. Some examples are given. The interpretation of the experimental data may become misleading if a physical quantity such as the Fermi-level stabilization energy of heavily radiation-damaged semiconductors is considered which derives from the complex semiconductor band-structure as the branch-point of the interface-induced gap states. Springer-Verlag, 2007 Applied Physics A Springer-Verlag 87/3(2007-06-01), 359-366 0947-8396 87:3<359 2007 87 339 https://doi.org/10.1007/s00339-007-3925-9 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00339-007-3925-9 text/html Onlinezugriff via DOI NATIONALLICENCE 100 1- Mönch W. Department of Physics, Universität Duisburg-Essen, 47048, Duisburg, Germany aut NATIONALLICENCE 773 0- Applied Physics A Springer-Verlag 87/3(2007-06-01), 359-366 0947-8396 87:3<359 2007 87 339 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer