caa a22 4500 463215257 CHVBK 20180405153154.0 cr unu---uuuuu 170326e20070601xx s 000 0 eng 10.1007/s00339-007-3920-1 doi (NATIONALLICENCE)springer-10.1007/s00339-007-3920-1 High performance III/V RTD and PIN diode on a silicon (001) substrate [Elektronische Daten] [W. Prost, V. Khorenko, A.-C. Mofor, S. Neumann, A. Poloczek, A. Matiss, A. Bakin, A. Schlachetzki, F.-J. Tegude] We report on the fabrication of high performance InP-based devices on an exact (001)Si-substrate. On an InP-on-Si quasi-substrate, the growth of superlattices and low-temperature InAlAs buffer for surface and device layer improvement is investigated. The selected device examples are an InGaAsP PIN diode and an (In)AlAs/In(Ga)As resonant tunnelling diodes. The functionality of these examples relies sensitively on sharp interfaces of ultra thin layers and a high optical quality of epitaxially grown III/V layers silicon substrates. A qualitative improvement is obtained for a low-temperature InAlAs buffer layer grown prior to the of device layers. Based on device models extracted from the fabricated devices a potentially low-cost optical receiver circuit on a Si-substrate is proposed and simulated using HSPICE up to 10Gbit/s. Springer-Verlag, 2007 Prost W. Department of Solid-State Electronics, University Duisburg-Essen, 47048, Duisburg, Germany aut Khorenko V. Department of Solid-State Electronics, University Duisburg-Essen, 47048, Duisburg, Germany aut Mofor A.-C Department of Solid-State Electronics, University Duisburg-Essen, 47048, Duisburg, Germany aut Neumann S. Department of Solid-State Electronics, University Duisburg-Essen, 47048, Duisburg, Germany aut Poloczek A. Department of Solid-State Electronics, University Duisburg-Essen, 47048, Duisburg, Germany aut Matiss A. Department of Solid-State Electronics, University Duisburg-Essen, 47048, Duisburg, Germany aut Bakin A. Institute for Semiconductor Technology, Technical University Braunschweig, 38106, Braunschweig, Germany aut Schlachetzki A. Institute for Semiconductor Technology, Technical University Braunschweig, 38106, Braunschweig, Germany aut Tegude F.-J Department of Solid-State Electronics, University Duisburg-Essen, 47048, Duisburg, Germany aut Applied Physics A Springer-Verlag 87/3(2007-06-01), 539-544 0947-8396 87:3<539 2007 87 339 https://doi.org/10.1007/s00339-007-3920-1 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00339-007-3920-1 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Prost W. Department of Solid-State Electronics, University Duisburg-Essen, 47048, Duisburg, Germany aut NATIONALLICENCE 700 1- Khorenko V. Department of Solid-State Electronics, University Duisburg-Essen, 47048, Duisburg, Germany aut NATIONALLICENCE 700 1- Mofor A.-C Department of Solid-State Electronics, University Duisburg-Essen, 47048, Duisburg, Germany aut NATIONALLICENCE 700 1- Neumann S. Department of Solid-State Electronics, University Duisburg-Essen, 47048, Duisburg, Germany aut NATIONALLICENCE 700 1- Poloczek A. Department of Solid-State Electronics, University Duisburg-Essen, 47048, Duisburg, Germany aut NATIONALLICENCE 700 1- Matiss A. Department of Solid-State Electronics, University Duisburg-Essen, 47048, Duisburg, Germany aut NATIONALLICENCE 700 1- Bakin A. Institute for Semiconductor Technology, Technical University Braunschweig, 38106, Braunschweig, Germany aut NATIONALLICENCE 700 1- Schlachetzki A. Institute for Semiconductor Technology, Technical University Braunschweig, 38106, Braunschweig, Germany aut NATIONALLICENCE 700 1- Tegude F.-J Department of Solid-State Electronics, University Duisburg-Essen, 47048, Duisburg, Germany aut NATIONALLICENCE 773 0- Applied Physics A Springer-Verlag 87/3(2007-06-01), 539-544 0947-8396 87:3<539 2007 87 339 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer