caa a22 4500 463215311 CHVBK 20180405153154.0 cr unu---uuuuu 170326e20070601xx s 000 0 eng 10.1007/s00339-007-3873-4 doi (NATIONALLICENCE)springer-10.1007/s00339-007-3873-4 Surface and interface electronic properties of AlGaN(0001) epitaxial layers [Elektronische Daten] [A. Rizzi, M. Kocan, J. Malindretos, A. Schildknecht, N. Teofilov, K. Thonke, R. Sauer] AlGaN layers with Al content varying over the whole range of compositions were grown by molecular beam epitaxy (MBE) on n-6H-SiC substrates. The band gap energy is obtained from the vanishing of Fabry-Pérot oscillations in a fit to optical reflection spectra near the band gap absorption edge. The surface potential was determined by in-situ X-ray photoemission spectroscopy (XPS) and is found to increase as a function of the Al content from (0.5±0.1) eV to (1.3±0.1) eV, from GaN to AlN. A Si3N4 thin passivation layer was formed in-situ onto a 2DEG AlGaN/GaN structure. The mechanism underlying the passivation of high electron mobility transistor (HEMT) structures is suggested to be based on the formation of interface states, which keep the Fermi level fixed at a position close to that of the free AlGaN surface. Springer-Verlag, 2007 Rizzi A. IV. Physikalisches Institut, Georg-August-Universität Göttingen, Friedrich-Hund-Platz 1, 37077, Göttingen, Germany aut Kocan M. IV. Physikalisches Institut, Georg-August-Universität Göttingen, Friedrich-Hund-Platz 1, 37077, Göttingen, Germany aut Malindretos J. IV. Physikalisches Institut, Georg-August-Universität Göttingen, Friedrich-Hund-Platz 1, 37077, Göttingen, Germany aut Schildknecht A. Abteilung Halbleiterphysik, Universität Ulm, 89069, Ulm, Germany aut Teofilov N. Abteilung Halbleiterphysik, Universität Ulm, 89069, Ulm, Germany aut Thonke K. Abteilung Halbleiterphysik, Universität Ulm, 89069, Ulm, Germany aut Sauer R. Abteilung Halbleiterphysik, Universität Ulm, 89069, Ulm, Germany aut Applied Physics A Springer-Verlag 87/3(2007-06-01), 505-509 0947-8396 87:3<505 2007 87 339 https://doi.org/10.1007/s00339-007-3873-4 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00339-007-3873-4 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Rizzi A. IV. Physikalisches Institut, Georg-August-Universität Göttingen, Friedrich-Hund-Platz 1, 37077, Göttingen, Germany aut NATIONALLICENCE 700 1- Kocan M. IV. Physikalisches Institut, Georg-August-Universität Göttingen, Friedrich-Hund-Platz 1, 37077, Göttingen, Germany aut NATIONALLICENCE 700 1- Malindretos J. IV. Physikalisches Institut, Georg-August-Universität Göttingen, Friedrich-Hund-Platz 1, 37077, Göttingen, Germany aut NATIONALLICENCE 700 1- Schildknecht A. Abteilung Halbleiterphysik, Universität Ulm, 89069, Ulm, Germany aut NATIONALLICENCE 700 1- Teofilov N. Abteilung Halbleiterphysik, Universität Ulm, 89069, Ulm, Germany aut NATIONALLICENCE 700 1- Thonke K. Abteilung Halbleiterphysik, Universität Ulm, 89069, Ulm, Germany aut NATIONALLICENCE 700 1- Sauer R. Abteilung Halbleiterphysik, Universität Ulm, 89069, Ulm, Germany aut NATIONALLICENCE 773 0- Applied Physics A Springer-Verlag 87/3(2007-06-01), 505-509 0947-8396 87:3<505 2007 87 339 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer