caa a22 4500 463215338 CHVBK 20180405153154.0 cr unu---uuuuu 170326e20070601xx s 000 0 eng 10.1007/s00339-007-3917-9 doi (NATIONALLICENCE)springer-10.1007/s00339-007-3917-9 Growth and properties of SiGe structures obtained by selective epitaxy on finite areas [Elektronische Daten] [L. Vescan, T. Stoica, E. Sutter] Selective epitaxy growth (SEG) was used to build SiGe optoelectronic devices and nanoscale structures for the future nanotechnology. The growth of strained SiGe on small areas offers some advantages for improvement of device performances. In particular, with relative large area light emitting diodes (LED), the emission efficiency of SiGe diodes can be increased up to 0.1% internal value at room temperature. Further improvements are expected for nanoscale devices. By SEG on mesas, Ge islands can be obtained ordered in lines along the mesas edges. Precise localization of Ge dots can be obtained by SEG in very small oxide windows and even only one island/window is formed. It was shown that nanostructures of size down to 5nm can be grown by this method. Springer-Verlag, 2007 Vescan L. Richtericher Str. 86, 52072, Aachen, Germany aut Stoica T. IBN-1, Forschungszentrum Jülich, 52425, Jülich, Germany aut Sutter E. Center for Functional Nanomaterials, Brookhaven National Laboratory, Bldg. 480, P.O. Box 5000, 11973-5000, Upton, NY, USA aut Applied Physics A Springer-Verlag 87/3(2007-06-01), 485-490 0947-8396 87:3<485 2007 87 339 https://doi.org/10.1007/s00339-007-3917-9 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00339-007-3917-9 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Vescan L. Richtericher Str. 86, 52072, Aachen, Germany aut NATIONALLICENCE 700 1- Stoica T. IBN-1, Forschungszentrum Jülich, 52425, Jülich, Germany aut NATIONALLICENCE 700 1- Sutter E. Center for Functional Nanomaterials, Brookhaven National Laboratory, Bldg. 480, P.O. Box 5000, 11973-5000, Upton, NY, USA aut NATIONALLICENCE 773 0- Applied Physics A Springer-Verlag 87/3(2007-06-01), 485-490 0947-8396 87:3<485 2007 87 339 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer