caa a22 4500 463215370 CHVBK 20180405153154.0 cr unu---uuuuu 170326e20070601xx s 000 0 eng 10.1007/s00339-007-3913-0 doi (NATIONALLICENCE)springer-10.1007/s00339-007-3913-0 Daum W. Institut für Physik und Physikalische Technologien, TU Clausthal, Leibnizstr. 4, 38678, Clausthal-Zellerfeld, Germany aut Optical studies of Si/SiO 2 interfaces by second-harmonic generation spectroscopy of silicon interband transitions [Elektronische Daten] [W. Daum] Optical second-harmonic generation (SHG) studies of Si/SiO2 interfaces by resonant two-photon excitation of Si interband transitions are reviewed. Three different types of interband resonances at Si interfaces are identified in SHG spectra: (i) E1 and E2 critical-point bulk interband transitions in the space-charge region of charged Si interfaces, (ii) E1- and E2-type transitions associated with Si atoms at the interface in bulk-like tetrahedral coordination, and (iii) transitions related to Si interface atoms with bonding properties specific of the atomic structure of the interface. The effects of the polarity of space-charge fields on SHG spectra of Si(100)/SiO2 interfaces are also discussed. Springer-Verlag, 2007 Applied Physics A Springer-Verlag 87/3(2007-06-01), 451-460 0947-8396 87:3<451 2007 87 339 https://doi.org/10.1007/s00339-007-3913-0 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00339-007-3913-0 text/html Onlinezugriff via DOI NATIONALLICENCE 100 1- Daum W. Institut für Physik und Physikalische Technologien, TU Clausthal, Leibnizstr. 4, 38678, Clausthal-Zellerfeld, Germany aut NATIONALLICENCE 773 0- Applied Physics A Springer-Verlag 87/3(2007-06-01), 451-460 0947-8396 87:3<451 2007 87 339 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer