caa a22 4500 463215419 CHVBK 20180405153154.0 cr unu---uuuuu 170326e20070601xx s 000 0 eng 10.1007/s00339-007-3880-5 doi (NATIONALLICENCE)springer-10.1007/s00339-007-3880-5 Osvald J. Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 84104, Bratislava, Slovakia aut Polarization effects and energy band diagram in AlGaN/GaN heterostructure [Elektronische Daten] [J. Osvald] We report on a classical approach used to calculate energy band diagrams of AlGaN/GaN heterostructures. We were able to calculate the band diagram and carrier concentrations by this method also when the external bias was applied on the structure. The potential on the Schottky barrier side of the structure is defined more exactly than in a self-consistent solution of Poisson and Schrödinger equations. Dependence of the band profile and the carrier concentration of the two-dimensional gas on the piezoelectric charge can also be calculated by this approach. Springer-Verlag, 2007 Applied Physics A Springer-Verlag 87/4(2007-06-01), 679-682 0947-8396 87:4<679 2007 87 339 https://doi.org/10.1007/s00339-007-3880-5 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00339-007-3880-5 text/html Onlinezugriff via DOI NATIONALLICENCE 100 1- Osvald J. Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 84104, Bratislava, Slovakia aut NATIONALLICENCE 773 0- Applied Physics A Springer-Verlag 87/4(2007-06-01), 679-682 0947-8396 87:4<679 2007 87 339 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer