caa a22 4500 463215427 CHVBK 20180405153154.0 cr unu---uuuuu 170326e20070601xx s 000 0 eng 10.1007/s00339-007-3896-x doi (NATIONALLICENCE)springer-10.1007/s00339-007-3896-x Laser-induced thermal effects on Si/SiO2 free-standing superlattices [Elektronische Daten] [L. Khriachtchev, S. Novikov] The thermal effects produced by continuous-wave laser radiation on free-standing Si/SiO2 superlattices are studied. We compare two samples with different SiO2 layer thicknesses (2 and 6nm) and the same Si layer thickness (2nm). The as-prepared free-standing superlattices contain some amount of Si nanocrystals (Si-nc). Intense laser irradiation at 488nm of the as-prepared samples enhances the Raman scattering of Si-nc by two orders of magnitude. This laser-induced crystallization originates from melting of Si nanostructures in silica, which makes Si-nc better ordered and better isolated from the oxide surrounding. Continuous-wave laser control of Si-nc stress was achieved in these samples. In the proposed model, intense laser radiation melts Si-nc, and Si crystallization upon cooling down from the liquid phase in a silica matrix leads to compressive stress. The Si-nc stress can be tuned in the ∼3GPa range using laser annealing below the Si melting temperature. The high laser-induced temperatures were verified with Raman spectroscopy. The laser-induced heat leads to a strongly nonlinear rise of light emission. The light emission is also observed in the anti-Stokes region, and its temperature dependence is practically the same for the two studied samples. The laser-induced temperature is essentially controlled by the absorbed laser power. Springer-Verlag, 2007 Khriachtchev L. Laboratory of Physical Chemistry, University of Helsinki, P.O. Box 55, 00014, Helsinki, Finland aut Novikov S. Electron Physics Laboratory, Helsinki University of Technology, P.O. Box 3000, 02015, Helsinki, Finland aut Applied Physics A Springer-Verlag 87/4(2007-06-01), 761-766 0947-8396 87:4<761 2007 87 339 https://doi.org/10.1007/s00339-007-3896-x text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00339-007-3896-x text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Khriachtchev L. Laboratory of Physical Chemistry, University of Helsinki, P.O. Box 55, 00014, Helsinki, Finland aut NATIONALLICENCE 700 1- Novikov S. Electron Physics Laboratory, Helsinki University of Technology, P.O. Box 3000, 02015, Helsinki, Finland aut NATIONALLICENCE 773 0- Applied Physics A Springer-Verlag 87/4(2007-06-01), 761-766 0947-8396 87:4<761 2007 87 339 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer