caa a22 4500 46321546X CHVBK 20180405153155.0 cr unu---uuuuu 170326e20070601xx s 000 0 eng 10.1007/s00339-007-3867-2 doi (NATIONALLICENCE)springer-10.1007/s00339-007-3867-2 Formation and growth of embedded indium nanoclusters by In2 + implantation in silica [Elektronische Daten] [P. Santhana Raman, K.G.M. Nair, R. Kesavamoorthy, B.K. Panigrahi, S. Dhara, V. Ravichandran] Indium nanoclusters are synthesized in an amorphous silica matrix using an ion-implantation technique. Indium ions (In2+) with energy of 890keV are implanted on silica to fluences in the range of 3×1016-3×1017cm-2. The formation of indium nanoclusters is confirmed by optical absorption spectrometry and glancing incidence X-ray diffraction studies. A low frequency Raman scattering technique is used to study the growth of embedded indium nanoclusters in the silica matrix as a function of fluence and post-implantation annealing duration. Rutherford backscattering spectrometry studies show the surface segregation of implanted indium. Photoluminescence studies indicate the formation of a small quantity of indium oxide phase in the ion-implanted samples. Springer-Verlag, 2007 Santhana Raman P. Materials Science Centre, Department of Nuclear Physics, Guindy Campus, University of Madras, 600025, Chennai, India aut Nair K.G.M. Materials Science Division, Indira Gandhi Centre for Atomic Research, 603102, Kalpakkam, India aut Kesavamoorthy R. Materials Science Division, Indira Gandhi Centre for Atomic Research, 603102, Kalpakkam, India aut Panigrahi B.K. Materials Science Division, Indira Gandhi Centre for Atomic Research, 603102, Kalpakkam, India aut Dhara S. Materials Science Division, Indira Gandhi Centre for Atomic Research, 603102, Kalpakkam, India aut Ravichandran V. Materials Science Centre, Department of Nuclear Physics, Guindy Campus, University of Madras, 600025, Chennai, India aut Applied Physics A Springer-Verlag 87/4(2007-06-01), 709-713 0947-8396 87:4<709 2007 87 339 https://doi.org/10.1007/s00339-007-3867-2 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00339-007-3867-2 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Santhana Raman P. Materials Science Centre, Department of Nuclear Physics, Guindy Campus, University of Madras, 600025, Chennai, India aut NATIONALLICENCE 700 1- Nair K.G.M. Materials Science Division, Indira Gandhi Centre for Atomic Research, 603102, Kalpakkam, India aut NATIONALLICENCE 700 1- Kesavamoorthy R. Materials Science Division, Indira Gandhi Centre for Atomic Research, 603102, Kalpakkam, India aut NATIONALLICENCE 700 1- Panigrahi B.K. Materials Science Division, Indira Gandhi Centre for Atomic Research, 603102, Kalpakkam, India aut NATIONALLICENCE 700 1- Dhara S. Materials Science Division, Indira Gandhi Centre for Atomic Research, 603102, Kalpakkam, India aut NATIONALLICENCE 700 1- Ravichandran V. Materials Science Centre, Department of Nuclear Physics, Guindy Campus, University of Madras, 600025, Chennai, India aut NATIONALLICENCE 773 0- Applied Physics A Springer-Verlag 87/4(2007-06-01), 709-713 0947-8396 87:4<709 2007 87 339 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer