caa a22 4500 463215532 CHVBK 20180405153155.0 cr unu---uuuuu 170326e20070601xx s 000 0 eng 10.1007/s00339-007-3922-z doi (NATIONALLICENCE)springer-10.1007/s00339-007-3922-z Qualitative evaluation of active potential barriers in SnO2-based polycrystalline devices by electrostatic force microscopy [Elektronische Daten] [V.P.B. Marques, M. Cilense, P.R. Bueno, M.O. Orlandi, J.A. Varela, E. Longo] This paper discuss the qualitative use of electrostatic force microscopy to study the grain boundary active potential barrier present in dense SnO2-based polycrystalline semiconductors. The effect of heat treatment under rich- and poor-oxygen atmospheres was evaluated while especially considering the number of active barriers at grain boundary regions. The results show that the number of active barriers decrease after heat treatment in an oxygen-poor atmosphere and increase after heat treatment in oxygen-rich atmospheres. The observed effect was explained by considering the presence of oxidized transition metal elements segregated at grain boundary regions which leads to the p-type character of this region, in agreement with the atomic barrier formation mechanism in metal oxide varistor systems. Springer-Verlag, 2007 Marques V.P.B. Instituto de Química, Universidade Estadual Paulista, UNESP, CEP. 14800-900, Araraquara, SP, Brazil aut Cilense M. Instituto de Química, Universidade Estadual Paulista, UNESP, CEP. 14800-900, Araraquara, SP, Brazil aut Bueno P.R. Instituto de Química, Universidade Estadual Paulista, UNESP, CEP. 14800-900, Araraquara, SP, Brazil aut Orlandi M.O. Instituto de Química, Universidade Estadual Paulista, UNESP, CEP. 14800-900, Araraquara, SP, Brazil aut Varela J.A. Instituto de Química, Universidade Estadual Paulista, UNESP, CEP. 14800-900, Araraquara, SP, Brazil aut Longo E. Instituto de Química, Universidade Estadual Paulista, UNESP, CEP. 14800-900, Araraquara, SP, Brazil aut Applied Physics A Springer-Verlag 87/4(2007-06-01), 793-796 0947-8396 87:4<793 2007 87 339 https://doi.org/10.1007/s00339-007-3922-z text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00339-007-3922-z text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Marques V.P.B. Instituto de Química, Universidade Estadual Paulista, UNESP, CEP. 14800-900, Araraquara, SP, Brazil aut NATIONALLICENCE 700 1- Cilense M. Instituto de Química, Universidade Estadual Paulista, UNESP, CEP. 14800-900, Araraquara, SP, Brazil aut NATIONALLICENCE 700 1- Bueno P.R. Instituto de Química, Universidade Estadual Paulista, UNESP, CEP. 14800-900, Araraquara, SP, Brazil aut NATIONALLICENCE 700 1- Orlandi M.O. Instituto de Química, Universidade Estadual Paulista, UNESP, CEP. 14800-900, Araraquara, SP, Brazil aut NATIONALLICENCE 700 1- Varela J.A. Instituto de Química, Universidade Estadual Paulista, UNESP, CEP. 14800-900, Araraquara, SP, Brazil aut NATIONALLICENCE 700 1- Longo E. Instituto de Química, Universidade Estadual Paulista, UNESP, CEP. 14800-900, Araraquara, SP, Brazil aut NATIONALLICENCE 773 0- Applied Physics A Springer-Verlag 87/4(2007-06-01), 793-796 0947-8396 87:4<793 2007 87 339 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer