caa a22 4500 463215648 CHVBK 20180405153155.0 cr unu---uuuuu 170326e20070601xx s 000 0 eng 10.1007/s00339-007-3890-3 doi (NATIONALLICENCE)springer-10.1007/s00339-007-3890-3 Dielectrophoretically aligned GaN nanowire rectifiers [Elektronische Daten] [S.-Y. Lee, T.-H. Kim, D.-I. Suh, E.-K. Suh, N.-K. Cho, W.-K. Seong, S.-K. Lee] We demonstrate GaN nanowire (NW) current rectifiers which were formed by assembling n-GaN nanowires on a patterned p-Si substrate by means of alternating current (ac) dielectrophoresis. The dielectrophoresis was accomplished at a frequency of 10kHz with three different ac bias voltages (5, 10, and 15 Vp-p), indicating that the number of aligned GaN nanowires increased with increasing ac bias voltage. The n-GaN NW/p-Si diodes showed well-defined current rectifying behavior with a forward voltage drop of 1.2-1.5V at a current density of 200A/cm2. We observed that the GaN NW diode functioned well as a half-wave rectifier. Springer-Verlag, 2007 Lee S.-Y Department of Semiconductor Science and Technology, SPRC, Chonbuk National University, 561-756, Jeonju, South Korea aut Kim T.-H Department of Semiconductor Science and Technology, SPRC, Chonbuk National University, 561-756, Jeonju, South Korea aut Suh D.-I Department of Semiconductor Science and Technology, SPRC, Chonbuk National University, 561-756, Jeonju, South Korea aut Suh E.-K Department of Semiconductor Science and Technology, SPRC, Chonbuk National University, 561-756, Jeonju, South Korea aut Cho N.-K Department of Semiconductor Science and Technology, SPRC, Chonbuk National University, 561-756, Jeonju, South Korea aut Seong W.-K Nano Mechatronics Research Center, Korea Electronics Technology Institute (KETI), 463-816, Seongnam, South Korea aut Lee S.-K Department of Semiconductor Science and Technology, SPRC, Chonbuk National University, 561-756, Jeonju, South Korea aut Applied Physics A Springer-Verlag 87/4(2007-06-01), 739-742 0947-8396 87:4<739 2007 87 339 https://doi.org/10.1007/s00339-007-3890-3 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00339-007-3890-3 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Lee S.-Y Department of Semiconductor Science and Technology, SPRC, Chonbuk National University, 561-756, Jeonju, South Korea aut NATIONALLICENCE 700 1- Kim T.-H Department of Semiconductor Science and Technology, SPRC, Chonbuk National University, 561-756, Jeonju, South Korea aut NATIONALLICENCE 700 1- Suh D.-I Department of Semiconductor Science and Technology, SPRC, Chonbuk National University, 561-756, Jeonju, South Korea aut NATIONALLICENCE 700 1- Suh E.-K Department of Semiconductor Science and Technology, SPRC, Chonbuk National University, 561-756, Jeonju, South Korea aut NATIONALLICENCE 700 1- Cho N.-K Department of Semiconductor Science and Technology, SPRC, Chonbuk National University, 561-756, Jeonju, South Korea aut NATIONALLICENCE 700 1- Seong W.-K Nano Mechatronics Research Center, Korea Electronics Technology Institute (KETI), 463-816, Seongnam, South Korea aut NATIONALLICENCE 700 1- Lee S.-K Department of Semiconductor Science and Technology, SPRC, Chonbuk National University, 561-756, Jeonju, South Korea aut NATIONALLICENCE 773 0- Applied Physics A Springer-Verlag 87/4(2007-06-01), 739-742 0947-8396 87:4<739 2007 87 339 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer