caa a22 4500 463215656 CHVBK 20180405153155.0 cr unu---uuuuu 170326e20070601xx s 000 0 eng 10.1007/s00339-007-3885-0 doi (NATIONALLICENCE)springer-10.1007/s00339-007-3885-0 Growth and characterization of GaN nanorods through ammoniating process by magnetron sputtering on Si(111) substrates [Elektronische Daten] [S. Xue, H. Zhuang, C. Xue, L. Hu, B. Li, S. Zhang] GaN nanorods have been successfully synthesized on Si(111) substrates by magnetron sputtering through ammoniating Ga2O3/ZnO films at 950°C in a quartz tube. The GaN nanorods are characterized by X-ray diffraction, scanning electron microscopy, field-emission transmission electron microscopy, X-ray photoelectron spectroscopy and fluorescence spectrophotometry. The results show that the nanorods have a pure hexagonal GaN wurtzite structure with lengths of about several micrometers and diameters of about 200nm, and the growth direction of the GaN nanorods is parallel to the (101) plane. The photoluminescence spectrum indicates that the nanorods have a good emission property. Finally, the growth mechanism is also briefly discussed. Springer-Verlag, 2007 Xue S. Institute of Semiconductors, Shandong Normal University, 250014, Jinan, P.R. China aut Zhuang H. Institute of Semiconductors, Shandong Normal University, 250014, Jinan, P.R. China aut Xue C. Institute of Semiconductors, Shandong Normal University, 250014, Jinan, P.R. China aut Hu L. Institute of Semiconductors, Shandong Normal University, 250014, Jinan, P.R. China aut Li B. Institute of Semiconductors, Shandong Normal University, 250014, Jinan, P.R. China aut Zhang S. Institute of Semiconductors, Shandong Normal University, 250014, Jinan, P.R. China aut Applied Physics A Springer-Verlag 87/4(2007-06-01), 645-649 0947-8396 87:4<645 2007 87 339 https://doi.org/10.1007/s00339-007-3885-0 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00339-007-3885-0 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Xue S. Institute of Semiconductors, Shandong Normal University, 250014, Jinan, P.R. China aut NATIONALLICENCE 700 1- Zhuang H. Institute of Semiconductors, Shandong Normal University, 250014, Jinan, P.R. China aut NATIONALLICENCE 700 1- Xue C. Institute of Semiconductors, Shandong Normal University, 250014, Jinan, P.R. China aut NATIONALLICENCE 700 1- Hu L. Institute of Semiconductors, Shandong Normal University, 250014, Jinan, P.R. China aut NATIONALLICENCE 700 1- Li B. Institute of Semiconductors, Shandong Normal University, 250014, Jinan, P.R. China aut NATIONALLICENCE 700 1- Zhang S. Institute of Semiconductors, Shandong Normal University, 250014, Jinan, P.R. China aut NATIONALLICENCE 773 0- Applied Physics A Springer-Verlag 87/4(2007-06-01), 645-649 0947-8396 87:4<645 2007 87 339 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer