caa a22 4500 463215737 CHVBK 20180405153155.0 cr unu---uuuuu 170326e20070601xx s 000 0 eng 10.1007/s00339-007-3895-y doi (NATIONALLICENCE)springer-10.1007/s00339-007-3895-y Chemical solution-process method to synthesize ZnO nanorods with ultra-thin pinheads and ultra-thin nanobelts [Elektronische Daten] [W. Bai, K. Yu, Q. Zhang, Y. Huang, Q. Wang, Z. Zhu, N. Dai, Y. Sun] ZnO nanorods with 30nm-diameter ultra-thin pinheads and ultra-thin nanobelts were successfully synthesized using a thiourea solution to etch nanorods and nancombs, which were obtained by a conventional thermal evaporation method. The materials obtained were investigated by field emission scanning electron microscopy and energy-dispersive X-ray fluorescence. The data shows that hydrogen ions play an important role in synthesizing ZnO nanorods with ultra-thin pinheads and ultra-thin nanobelts. Field emission plots indicated that the turn-on field was reduced from 2.10V/μm to 1.55V/μm after thiourea solution treatment at a current density of 0.1μA/cm2. Room-temperature photoluminescence spectra from ZnO nanostructures showed the PL spectrum peaks shifted towards short wavelengths with a large enhancement of UV bands compared with those of ZnO nanorods and nanocombs. Springer-Verlag, 2007 Bai W. Department of Electronic Engineering, East China Normal University, 200062, Shanghai, P.R. China aut Yu K. Department of Electronic Engineering, East China Normal University, 200062, Shanghai, P.R. China aut Zhang Q. Department of Electronic Engineering, East China Normal University, 200062, Shanghai, P.R. China aut Huang Y. Department of Electronic Engineering, East China Normal University, 200062, Shanghai, P.R. China aut Wang Q. Department of Electronic Engineering, East China Normal University, 200062, Shanghai, P.R. China aut Zhu Z. Department of Electronic Engineering, East China Normal University, 200062, Shanghai, P.R. China aut Dai N. National Lab for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, 200083, Shanghai, P.R. China aut Sun Y. National Lab for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, 200083, Shanghai, P.R. China aut Applied Physics A Springer-Verlag 87/4(2007-06-01), 755-759 0947-8396 87:4<755 2007 87 339 https://doi.org/10.1007/s00339-007-3895-y text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s00339-007-3895-y text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Bai W. Department of Electronic Engineering, East China Normal University, 200062, Shanghai, P.R. China aut NATIONALLICENCE 700 1- Yu K. Department of Electronic Engineering, East China Normal University, 200062, Shanghai, P.R. China aut NATIONALLICENCE 700 1- Zhang Q. Department of Electronic Engineering, East China Normal University, 200062, Shanghai, P.R. China aut NATIONALLICENCE 700 1- Huang Y. Department of Electronic Engineering, East China Normal University, 200062, Shanghai, P.R. China aut NATIONALLICENCE 700 1- Wang Q. Department of Electronic Engineering, East China Normal University, 200062, Shanghai, P.R. China aut NATIONALLICENCE 700 1- Zhu Z. Department of Electronic Engineering, East China Normal University, 200062, Shanghai, P.R. China aut NATIONALLICENCE 700 1- Dai N. National Lab for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, 200083, Shanghai, P.R. China aut NATIONALLICENCE 700 1- Sun Y. National Lab for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, 200083, Shanghai, P.R. China aut NATIONALLICENCE 773 0- Applied Physics A Springer-Verlag 87/4(2007-06-01), 755-759 0947-8396 87:4<755 2007 87 339 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer