caa a22 4500 463221338 CHVBK 20180405153213.0 cr unu---uuuuu 170326e20070101xx s 000 0 eng 10.1007/s10853-006-1032-5 doi (NATIONALLICENCE)springer-10.1007/s10853-006-1032-5 Preparation and characterization of Mn-doped BaTiO3 thin films by magnetron sputtering [Elektronische Daten] [J. Chu, T. Mahalingam, C. Liu, S. Wang] Barium titanate (BaTiO3) thin films doped with Mn (0.1-1.0at%) were prepared by r.f. magnetron sputtering technique. Oxygen/argon (O2/Ar) gas ratio is found to influence the sputtering rate of the films. The effects of Mn doping on the structural, microstructural and electrical properties of BaTiO3 thin films are studied. Mn-doped thin films annealed at high temperatures (700°C) exhibited cubic perovskite structure. Mn doping is found to reduce the crystallization temperature and inhibit the grain growth in barium titanate thin films. The dielectric constant increases with Mn content and the dielectric loss (tan δ) reveals a minimum value of 0.0054 for 0.5% Mn-doped BaTiO3 films measured at 1MHz. The leakage current density decreases with Mn doping and is 10−11A/cm−2 at 6kV/cm for 1% Mn-doped thin films. Springer Science+Business Media, LLC, 2006 Chu J. Institute of Materials Engineering, National Taiwan Ocean University, 202, Keelung, Taiwan aut Mahalingam T. Institute of Materials Engineering, National Taiwan Ocean University, 202, Keelung, Taiwan aut Liu C. Institute of Materials Engineering, National Taiwan Ocean University, 202, Keelung, Taiwan aut Wang S. Department of Materials and Minerals Resources Engineering, National Taipei University of Technology, 106, Taipei, Taiwan aut Journal of Materials Science Springer US; http://www.springer-ny.com 42/1(2007-01-01), 346-351 0022-2461 42:1<346 2007 42 10853 https://doi.org/10.1007/s10853-006-1032-5 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10853-006-1032-5 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Chu J. Institute of Materials Engineering, National Taiwan Ocean University, 202, Keelung, Taiwan aut NATIONALLICENCE 700 1- Mahalingam T. Institute of Materials Engineering, National Taiwan Ocean University, 202, Keelung, Taiwan aut NATIONALLICENCE 700 1- Liu C. Institute of Materials Engineering, National Taiwan Ocean University, 202, Keelung, Taiwan aut NATIONALLICENCE 700 1- Wang S. Department of Materials and Minerals Resources Engineering, National Taipei University of Technology, 106, Taipei, Taiwan aut NATIONALLICENCE 773 0- Journal of Materials Science Springer US; http://www.springer-ny.com 42/1(2007-01-01), 346-351 0022-2461 42:1<346 2007 42 10853 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer