caa a22 4500 463221435 CHVBK 20180405153213.0 cr unu---uuuuu 170326e20070801xx s 000 0 eng 10.1007/s10853-007-1510-4 doi (NATIONALLICENCE)springer-10.1007/s10853-007-1510-4 Synthesis of MgTiO3 by solid state reaction and characteristics with addition [Elektronische Daten] [Xiaohua Zhou, Ying Yuan, Longcheng Xiang, Yong Huang] Magnesium titanate was synthesized by the solid state reaction. Powder XRD method was used to identify the phases and content, which indicates that pure phase of MgTiO3 can be synthesized by the solid state reaction even without the addition of excess MgO. Doped with 5 at.% CaTiO3 and 6wt.% ZnNb2O6, MgTiO3 ceramics sintered at 1300°C possess excellent microwave dielectric properties: a dielectric constant εr of 21, a τ f value of 0ppm/°Cand a Q×f value of 130,000GHz (at 13GHz). Springer Science+Business Media, LLC, 2007 Zhou Xiaohua State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Jianshe Road, 610054, Chengdu, P.R. China aut Yuan Ying State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Jianshe Road, 610054, Chengdu, P.R. China aut Xiang Longcheng State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Jianshe Road, 610054, Chengdu, P.R. China aut Huang Yong State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Jianshe Road, 610054, Chengdu, P.R. China aut Journal of Materials Science Kluwer Academic Publishers-Plenum Publishers; http://www.springer-ny.com 42/16(2007-08-01), 6628-6632 0022-2461 42:16<6628 2007 42 10853 https://doi.org/10.1007/s10853-007-1510-4 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10853-007-1510-4 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Zhou Xiaohua State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Jianshe Road, 610054, Chengdu, P.R. China aut NATIONALLICENCE 700 1- Yuan Ying State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Jianshe Road, 610054, Chengdu, P.R. China aut NATIONALLICENCE 700 1- Xiang Longcheng State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Jianshe Road, 610054, Chengdu, P.R. China aut NATIONALLICENCE 700 1- Huang Yong State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Jianshe Road, 610054, Chengdu, P.R. China aut NATIONALLICENCE 773 0- Journal of Materials Science Kluwer Academic Publishers-Plenum Publishers; http://www.springer-ny.com 42/16(2007-08-01), 6628-6632 0022-2461 42:16<6628 2007 42 10853 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer