caa a22 4500 463221885 CHVBK 20180405153214.0 cr unu---uuuuu 170326e20070801xx s 000 0 eng 10.1007/s10853-007-1641-7 doi (NATIONALLICENCE)springer-10.1007/s10853-007-1641-7 Effects of Gd doping on the sintering and microwave dielectric properties of BiNbO4 ceramics [Elektronische Daten] [Yue Pang, Chaowei Zhong, Shuren Zhang] Gd3+ was chosen as a substitute for Bi3+ in BiNbO4 ceramics, and the substitution effects on the sintering performance and microwave dielectric properties were studied in this paper. The high temperature triclinic phase was observed only in the Bi0.98Gd0.02NbO4 ceramics when sintered at 920°C. Both bulk densities and dielectric constant (εr) increased with the sintering temperature, while decreased with the Gd content. The quality factor (Q) exhibited a correlation to the Gd content and the microstructures of Bi1−x Gd x NbO4 ceramics. At the sintering temperature of 900°C, Bi0.992Gd0.008NbO4 ceramics exhibited microwave dielectric properties of εr ∼ 43.87, Q×f ∼ 16,852GHz (at 4.3GHz), and its temperature coefficient of resonant frequency (τf) was found to be near-to-zero. Springer Science+Business Media, LLC, 2007 Pang Yue State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science & Technology of China, 610054, Chengdu, China aut Zhong Chaowei State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science & Technology of China, 610054, Chengdu, China aut Zhang Shuren State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science & Technology of China, 610054, Chengdu, China aut Journal of Materials Science Kluwer Academic Publishers-Plenum Publishers; http://www.springer-ny.com 42/16(2007-08-01), 7052-7055 0022-2461 42:16<7052 2007 42 10853 https://doi.org/10.1007/s10853-007-1641-7 text/html Onlinezugriff via DOI 1 review-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10853-007-1641-7 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Pang Yue State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science & Technology of China, 610054, Chengdu, China aut NATIONALLICENCE 700 1- Zhong Chaowei State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science & Technology of China, 610054, Chengdu, China aut NATIONALLICENCE 700 1- Zhang Shuren State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science & Technology of China, 610054, Chengdu, China aut NATIONALLICENCE 773 0- Journal of Materials Science Kluwer Academic Publishers-Plenum Publishers; http://www.springer-ny.com 42/16(2007-08-01), 7052-7055 0022-2461 42:16<7052 2007 42 10853 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer