caa a22 4500 463221966 CHVBK 20180405153215.0 cr unu---uuuuu 170326e20070801xx s 000 0 eng 10.1007/s10853-006-1331-x doi (NATIONALLICENCE)springer-10.1007/s10853-006-1331-x Thermoelectrical properties and optical third harmonic generation of Gd-doped PbTe [Elektronische Daten] [K. Nouneh, K. Plucinski, M. Bakasse, I. Kityk] We performed the temperature measurements of transport and non-linear optical properties, particularly optical third harmonic generation of PbTe and Gd-doped PbTe to elucidate the effect of the rare earth ion doping on behavior of the thermal conductivity and the third-order non-linear optical susceptibility. The feature of Gd-doped PbTe shows the existence of small values of the low temperature resistivities, ( $${10^{-6}\Omega\,\hbox{cm}}$$ ) and a very significant value of mobility $${\mu=1.5^{\ast}10^{6}\hbox{cm}^{2}\hbox{V}^{-1} \hbox{s}^{-1}}$$ . The thermal conductivity κ decreases with incorporation of the rare earth ion (Gd) in PbTe matrice. The optical third harmonic generation (THG) shows that the great contribution of the phonons observed for PbGdTe compared to the PbTe, enhances the lattice thermal conductivity of network $${(\hbox{k}_{\rm ph})}$$ . Springer Science+Business Media, LLC, 2007 Nouneh K. Groupe d'Etude des Semiconducteurs, Université Montpellier II, Place Eugène Bataillon, 34095, Montpellier, France aut Plucinski K. Institute of Physics, J. Dlugosz University of Czestochowa, Aleja Aermii Krajowej 13/15, Czestochowa, Poland aut Bakasse M. Faculty of Science, University Chouaib Doukkali, 24000, El Jadida, Morocco aut Kityk I. Institute of Physics, J. Dlugosz University of Czestochowa, Aleja Aermii Krajowej 13/15, Czestochowa, Poland aut Journal of Materials Science Kluwer Academic Publishers-Plenum Publishers; http://www.springer-ny.com 42/16(2007-08-01), 6847-6853 0022-2461 42:16<6847 2007 42 10853 https://doi.org/10.1007/s10853-006-1331-x text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10853-006-1331-x text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Nouneh K. Groupe d'Etude des Semiconducteurs, Université Montpellier II, Place Eugène Bataillon, 34095, Montpellier, France aut NATIONALLICENCE 700 1- Plucinski K. Institute of Physics, J. Dlugosz University of Czestochowa, Aleja Aermii Krajowej 13/15, Czestochowa, Poland aut NATIONALLICENCE 700 1- Bakasse M. Faculty of Science, University Chouaib Doukkali, 24000, El Jadida, Morocco aut NATIONALLICENCE 700 1- Kityk I. Institute of Physics, J. Dlugosz University of Czestochowa, Aleja Aermii Krajowej 13/15, Czestochowa, Poland aut NATIONALLICENCE 773 0- Journal of Materials Science Kluwer Academic Publishers-Plenum Publishers; http://www.springer-ny.com 42/16(2007-08-01), 6847-6853 0022-2461 42:16<6847 2007 42 10853 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer