caa a22 4500 463221990 CHVBK 20180405153215.0 cr unu---uuuuu 170326e20070801xx s 000 0 eng 10.1007/s10853-006-1306-y doi (NATIONALLICENCE)springer-10.1007/s10853-006-1306-y Effects of hydrogenation and aging on the optical properties in porous Si layers [Elektronische Daten] [Do-Hyun Oh, Soojin Lee, Woon-Jo Cho, Tae Kim] The effects of hydrogenation and aging on the optical properties in porous Si (PS) layers were investigated by using photoluminescence (PL) measurements. When the hydrogenated PS layers were aged in air, the intensity of the PL spectrum increased. The emission peak for the hydrogenated PS layers shifted to higher energy with decreasing H2/N2 ratio. The relation of the dehydrogenized states in the as-formed PS surface to the quantum states of Si nanoparticles with relatively small sizes is discussed. These results indicate that the optical properties of PS layers are significantly affected by hydrogenation and aging. Springer Science+Business Media, LLC, 2007 Oh Do-Hyun Nano Device Research Center, Korea Institute of Science & Technology, 136-791, Seoul, Korea aut Lee Soojin Nano Device Research Center, Korea Institute of Science & Technology, 136-791, Seoul, Korea aut Cho Woon-Jo Nano Device Research Center, Korea Institute of Science & Technology, 136-791, Seoul, Korea aut Kim Tae Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, 133-791, Seongdong-gu, Seoul, Korea aut Journal of Materials Science Kluwer Academic Publishers-Plenum Publishers; http://www.springer-ny.com 42/16(2007-08-01), 6862-6865 0022-2461 42:16<6862 2007 42 10853 https://doi.org/10.1007/s10853-006-1306-y text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10853-006-1306-y text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Oh Do-Hyun Nano Device Research Center, Korea Institute of Science & Technology, 136-791, Seoul, Korea aut NATIONALLICENCE 700 1- Lee Soojin Nano Device Research Center, Korea Institute of Science & Technology, 136-791, Seoul, Korea aut NATIONALLICENCE 700 1- Cho Woon-Jo Nano Device Research Center, Korea Institute of Science & Technology, 136-791, Seoul, Korea aut NATIONALLICENCE 700 1- Kim Tae Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, 133-791, Seongdong-gu, Seoul, Korea aut NATIONALLICENCE 773 0- Journal of Materials Science Kluwer Academic Publishers-Plenum Publishers; http://www.springer-ny.com 42/16(2007-08-01), 6862-6865 0022-2461 42:16<6862 2007 42 10853 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer