caa a22 4500 463223314 CHVBK 20180405153219.0 cr unu---uuuuu 170326e20070301xx s 000 0 eng 10.1007/s10853-006-1238-6 doi (NATIONALLICENCE)springer-10.1007/s10853-006-1238-6 Preparation of BaTiO3-based ceramics by nanocomposite doping process [Elektronische Daten] [Bo Li, Shuren Zhang, Xiaohua Zhou, Sheng Wang, Zhu Chen] BaTiO3-based ultrafine nonreducible dielectrics for multilayer ceramic capacitors were prepared by a newly developed nanocomposite doping process. According to TG-DTA, XRD and TEM analysis, the nanocomposite dopants via sol-gel method were uniform and well dispersive. The micromechanism was investigated based on comparing conventional process with nano-doping process. It indicated that due to the special nano-effect, doping effect of additives became more effective and the microstructure and dielectric properties of ceramics were improved. The results showed that high performance dielectrics satisfying X8R specification were achieved, with high dielectric constant of 2,900, low dielectric loss of 0.6% and large insulation resistivity of 1012Ωcm. Springer Science+Business Media, LLC, 2006 Li Bo School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, 610054, Chengdu, Sichuan, P.R. China aut Zhang Shuren School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, 610054, Chengdu, Sichuan, P.R. China aut Zhou Xiaohua School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, 610054, Chengdu, Sichuan, P.R. China aut Wang Sheng School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, 610054, Chengdu, Sichuan, P.R. China aut Chen Zhu School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, 610054, Chengdu, Sichuan, P.R. China aut Journal of Materials Science Kluwer Academic Publishers-Plenum Publishers; http://www.springer-ny.com 42/6(2007-03-01), 2090-2096 0022-2461 42:6<2090 2007 42 10853 https://doi.org/10.1007/s10853-006-1238-6 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10853-006-1238-6 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Li Bo School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, 610054, Chengdu, Sichuan, P.R. China aut NATIONALLICENCE 700 1- Zhang Shuren School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, 610054, Chengdu, Sichuan, P.R. China aut NATIONALLICENCE 700 1- Zhou Xiaohua School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, 610054, Chengdu, Sichuan, P.R. China aut NATIONALLICENCE 700 1- Wang Sheng School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, 610054, Chengdu, Sichuan, P.R. China aut NATIONALLICENCE 700 1- Chen Zhu School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, 610054, Chengdu, Sichuan, P.R. China aut NATIONALLICENCE 773 0- Journal of Materials Science Kluwer Academic Publishers-Plenum Publishers; http://www.springer-ny.com 42/6(2007-03-01), 2090-2096 0022-2461 42:6<2090 2007 42 10853 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer