caa a22 4500 463223470 CHVBK 20180405153219.0 cr unu---uuuuu 170326e20071001xx s 000 0 eng 10.1007/s10853-007-1749-9 doi (NATIONALLICENCE)springer-10.1007/s10853-007-1749-9 The optical properties of porous silicon produced by metal-assisted anodic etching [Elektronische Daten] [Yue Zhao, Dongsheng Li, Wenbin Sang, Deren Yang, Minhua Jiang] Porous silicon (PS) was obtained from n-type (100) mono-crystalline silicon wafers with different metal using two different illumination conditions. The visible photoluminescence (PL) may come from defect-related radiative centers on PS surface and adsorbed hydrogen atoms may be associated to the elimination of irradiative centers on PS surface, which can be proved by the infrared absorption spectra. The metal can be used as catalytic role to increase the etching rate under back illumination, but under front illumination, the metal can cancel light-generated carrier leading to the decrease of etching rate during anodic etching. Furthermore, the change of minority carrier lifetime is opposite to the change of PL efficiency of PS, which can be Confirmed by the results of μ-PCD measurements. Springer Science+Business Media, LLC, 2007 Zhao Yue School of Materials Science and Engineering, Shanghai University, 200072, Shanghai, P.R. China aut Li Dongsheng State Key Laboratory of Silicon Materials, Zhejiang University, 310027, Hangzhou, P.R. China aut Sang Wenbin School of Materials Science and Engineering, Shanghai University, 200072, Shanghai, P.R. China aut Yang Deren State Key Laboratory of Silicon Materials, Zhejiang University, 310027, Hangzhou, P.R. China aut Jiang Minhua State Key Laboratory of Silicon Materials, Zhejiang University, 310027, Hangzhou, P.R. China aut Journal of Materials Science Springer US; http://www.springer-ny.com 42/20(2007-10-01), 8496-8500 0022-2461 42:20<8496 2007 42 10853 https://doi.org/10.1007/s10853-007-1749-9 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10853-007-1749-9 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Zhao Yue School of Materials Science and Engineering, Shanghai University, 200072, Shanghai, P.R. China aut NATIONALLICENCE 700 1- Li Dongsheng State Key Laboratory of Silicon Materials, Zhejiang University, 310027, Hangzhou, P.R. China aut NATIONALLICENCE 700 1- Sang Wenbin School of Materials Science and Engineering, Shanghai University, 200072, Shanghai, P.R. China aut NATIONALLICENCE 700 1- Yang Deren State Key Laboratory of Silicon Materials, Zhejiang University, 310027, Hangzhou, P.R. China aut NATIONALLICENCE 700 1- Jiang Minhua State Key Laboratory of Silicon Materials, Zhejiang University, 310027, Hangzhou, P.R. China aut NATIONALLICENCE 773 0- Journal of Materials Science Springer US; http://www.springer-ny.com 42/20(2007-10-01), 8496-8500 0022-2461 42:20<8496 2007 42 10853 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer