caa a22 4500 463223527 CHVBK 20180405153219.0 cr unu---uuuuu 170326e20071001xx s 000 0 eng 10.1007/s10853-007-1739-y doi (NATIONALLICENCE)springer-10.1007/s10853-007-1739-y Fabrication of conductive SrRuO3 thin film and Ba0.60Sr0.40TiO3/SrRuO3 bilayer films on MgO substrate [Elektronische Daten] [Wen Qin, Wan Ai, Jun Zhu, Jie Xiong, Jinlong Tang, Ying Zhang, Yan Li] Conductive SrRuO3 (SRO) thin films have been grown on (100) MgO substrates by pulsed laser deposition (PLD) technique. Effects of oxygen pressure and deposition temperature on the orientation of SRO thin film were investigated. X-ray diffraction (XRD) θ/2θ patterns and the temperature dependent resistivity measurements indicated that oxygen pressure of 30Pa and deposition temperature of 700°C were the optimized deposition parameters. A parallel-plate capacitor structure was prepared with the SRO films deposited under optimized condition as an electrode layer and Ba0.60Sr0.40TiO3 (BST) thin film as the dielectric layer. XRD Φ scans indicated a $$ {\text{[001]BST//[110/001]SRO//[001]MgO}} $$ epitaxial relationship between BST and SRO on MgO substrate. The dielectric constant and loss tangent measured at 10kHz and 300K was 427 and 0.099 under 0V bias, and 215 and 0.062 under 8V bias, respectively. A tunability of 49.6% has been achieved with DC bias as low as 8V. The C-V hysteresis curve and the P-E hysteresis loop suggested that the BST films epitaxially grown on SRO/MgO have ferroelectricity at room temperature. The induced ferroelectricity was believed to originate from the compressive strain between the epitaxial BST and SRO thin films. These results show the potential application of the BST/SRO heterostructures in microelectronic devices. Springer Science+Business Media, LLC, 2007 Qin Wen State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, 610054, Chengdu, China aut Ai Wan State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, 610054, Chengdu, China aut Zhu Jun State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, 610054, Chengdu, China aut Xiong Jie State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, 610054, Chengdu, China aut Tang Jinlong State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, 610054, Chengdu, China aut Zhang Ying State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, 610054, Chengdu, China aut Li Yan State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, 610054, Chengdu, China aut Journal of Materials Science Springer US; http://www.springer-ny.com 42/20(2007-10-01), 8707-8713 0022-2461 42:20<8707 2007 42 10853 https://doi.org/10.1007/s10853-007-1739-y text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10853-007-1739-y text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Qin Wen State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, 610054, Chengdu, China aut NATIONALLICENCE 700 1- Ai Wan State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, 610054, Chengdu, China aut NATIONALLICENCE 700 1- Zhu Jun State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, 610054, Chengdu, China aut NATIONALLICENCE 700 1- Xiong Jie State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, 610054, Chengdu, China aut NATIONALLICENCE 700 1- Tang Jinlong State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, 610054, Chengdu, China aut NATIONALLICENCE 700 1- Zhang Ying State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, 610054, Chengdu, China aut NATIONALLICENCE 700 1- Li Yan State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, 610054, Chengdu, China aut NATIONALLICENCE 773 0- Journal of Materials Science Springer US; http://www.springer-ny.com 42/20(2007-10-01), 8707-8713 0022-2461 42:20<8707 2007 42 10853 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer