<?xml version="1.0" encoding="UTF-8"?>
<collection xmlns="http://www.loc.gov/MARC21/slim">
 <record>
  <leader>     caa a22        4500</leader>
  <controlfield tag="001">463224817</controlfield>
  <controlfield tag="003">CHVBK</controlfield>
  <controlfield tag="005">20180405153223.0</controlfield>
  <controlfield tag="007">cr unu---uuuuu</controlfield>
  <controlfield tag="008">170326e20070601xx      s     000 0 eng  </controlfield>
  <datafield tag="024" ind1="7" ind2="0">
   <subfield code="a">10.1007/s10853-007-1682-y</subfield>
   <subfield code="2">doi</subfield>
  </datafield>
  <datafield tag="035" ind1=" " ind2=" ">
   <subfield code="a">(NATIONALLICENCE)springer-10.1007/s10853-007-1682-y</subfield>
  </datafield>
  <datafield tag="245" ind1="0" ind2="2">
   <subfield code="a">A novel method for massive fabrication of β-SiC nanowires</subfield>
   <subfield code="h">[Elektronische Daten]</subfield>
   <subfield code="c">[F. Li, G. Wen]</subfield>
  </datafield>
  <datafield tag="520" ind1="3" ind2=" ">
   <subfield code="a">Silicon carbide nanowires (NWs), that were over 200μm in length and 20-200nm in diameter, were prepared by high-pressure reaction from SiBONC powder tablets. Annealing temperatures between 1,500°C and 1,600°C and Si/B molar ratios between 70:30 and 60:40 were suitable for the growth of the nanowires. The nanowires were fabricated by in situ chemical vapor growth process on the tablets. The SiC nanowires were identified as single crystal β-SiC. The analysis of X-ray diffraction (XRD) and transmission electron microscopy (TEM) showed the single crystalline nature of nanowires with a growth direction of &lt;111&gt;. Massive growth of single crystalline SiC nanowires is important to meet the requirements of the fabrication of SiC nanowire-based nanodevices.</subfield>
  </datafield>
  <datafield tag="540" ind1=" " ind2=" ">
   <subfield code="a">Springer Science+Business Media, LLC, 2007</subfield>
  </datafield>
  <datafield tag="700" ind1="1" ind2=" ">
   <subfield code="a">Li</subfield>
   <subfield code="D">F.</subfield>
   <subfield code="u">Harbin Institute of Technology, School of Materials Science &amp; Engineering, 150001, Harbin, China</subfield>
   <subfield code="4">aut</subfield>
  </datafield>
  <datafield tag="700" ind1="1" ind2=" ">
   <subfield code="a">Wen</subfield>
   <subfield code="D">G.</subfield>
   <subfield code="u">Harbin Institute of Technology, School of Materials Science &amp; Engineering, 150001, Harbin, China</subfield>
   <subfield code="4">aut</subfield>
  </datafield>
  <datafield tag="773" ind1="0" ind2=" ">
   <subfield code="t">Journal of Materials Science</subfield>
   <subfield code="d">Kluwer Academic Publishers-Plenum Publishers; http://www.springer-ny.com</subfield>
   <subfield code="g">42/12(2007-06-01), 4125-4130</subfield>
   <subfield code="x">0022-2461</subfield>
   <subfield code="q">42:12&lt;4125</subfield>
   <subfield code="1">2007</subfield>
   <subfield code="2">42</subfield>
   <subfield code="o">10853</subfield>
  </datafield>
  <datafield tag="856" ind1="4" ind2="0">
   <subfield code="u">https://doi.org/10.1007/s10853-007-1682-y</subfield>
   <subfield code="q">text/html</subfield>
   <subfield code="z">Onlinezugriff via DOI</subfield>
  </datafield>
  <datafield tag="908" ind1=" " ind2=" ">
   <subfield code="D">1</subfield>
   <subfield code="a">research-article</subfield>
   <subfield code="2">jats</subfield>
  </datafield>
  <datafield tag="950" ind1=" " ind2=" ">
   <subfield code="B">NATIONALLICENCE</subfield>
   <subfield code="P">856</subfield>
   <subfield code="E">40</subfield>
   <subfield code="u">https://doi.org/10.1007/s10853-007-1682-y</subfield>
   <subfield code="q">text/html</subfield>
   <subfield code="z">Onlinezugriff via DOI</subfield>
  </datafield>
  <datafield tag="950" ind1=" " ind2=" ">
   <subfield code="B">NATIONALLICENCE</subfield>
   <subfield code="P">700</subfield>
   <subfield code="E">1-</subfield>
   <subfield code="a">Li</subfield>
   <subfield code="D">F.</subfield>
   <subfield code="u">Harbin Institute of Technology, School of Materials Science &amp; Engineering, 150001, Harbin, China</subfield>
   <subfield code="4">aut</subfield>
  </datafield>
  <datafield tag="950" ind1=" " ind2=" ">
   <subfield code="B">NATIONALLICENCE</subfield>
   <subfield code="P">700</subfield>
   <subfield code="E">1-</subfield>
   <subfield code="a">Wen</subfield>
   <subfield code="D">G.</subfield>
   <subfield code="u">Harbin Institute of Technology, School of Materials Science &amp; Engineering, 150001, Harbin, China</subfield>
   <subfield code="4">aut</subfield>
  </datafield>
  <datafield tag="950" ind1=" " ind2=" ">
   <subfield code="B">NATIONALLICENCE</subfield>
   <subfield code="P">773</subfield>
   <subfield code="E">0-</subfield>
   <subfield code="t">Journal of Materials Science</subfield>
   <subfield code="d">Kluwer Academic Publishers-Plenum Publishers; http://www.springer-ny.com</subfield>
   <subfield code="g">42/12(2007-06-01), 4125-4130</subfield>
   <subfield code="x">0022-2461</subfield>
   <subfield code="q">42:12&lt;4125</subfield>
   <subfield code="1">2007</subfield>
   <subfield code="2">42</subfield>
   <subfield code="o">10853</subfield>
  </datafield>
  <datafield tag="900" ind1=" " ind2="7">
   <subfield code="a">Metadata rights reserved</subfield>
   <subfield code="b">Springer special CC-BY-NC licence</subfield>
   <subfield code="2">nationallicence</subfield>
  </datafield>
  <datafield tag="898" ind1=" " ind2=" ">
   <subfield code="a">BK010053</subfield>
   <subfield code="b">XK010053</subfield>
   <subfield code="c">XK010000</subfield>
  </datafield>
  <datafield tag="949" ind1=" " ind2=" ">
   <subfield code="B">NATIONALLICENCE</subfield>
   <subfield code="F">NATIONALLICENCE</subfield>
   <subfield code="b">NL-springer</subfield>
  </datafield>
 </record>
</collection>
