caa a22 4500 463224930 CHVBK 20180405153224.0 cr unu---uuuuu 170326e20070601xx s 000 0 eng 10.1007/s10853-006-0372-5 doi (NATIONALLICENCE)springer-10.1007/s10853-006-0372-5 Growth and characterization of high resistivity c-axis oriented ZnO films on different substrates by RF magnetron sputtering for MEMS applications [Elektronische Daten] [Ravindra Singh, Mahesh Kumar, Sudhir Chandra] In the present work, we report the deposition of high resistivity c-axis oriented ZnO films by RF magnetron sputtering. The deposition parameters such as RF power, target-to-substrate spacing, substrate temperature, and sputtering gas composition affect the crystallographic properties of ZnO films, which were evaluated using XRD analysis. The self-heating of the substrate in plasma during film deposition was investigated and we report that highly "c-axis oriented” ZnO thin films can be prepared on different substrates without any external heating under optimized deposition parameters. The post-deposition annealing of the film at 900°C for 1h in air ambient increases the intensity of (002) peak corresponding to c-axis orientation in addition with the decrease in full width at half maxima (FWHM). Bond formation of ZnO was confirmed by FTIR analysis. Grains distribution and surface roughness have been analyzed using SEM and AFM. The DC resistivity of the films prepared under different deposition conditions was measured using MIS/MIM structures and was found to be in the range of 1011-1012Ωcm at low electric field of 104V/cm. The ZnO film of 1μm thickness has transmittance of over 85% in the visible region. Applications of these films in MEMS devices are discussed. Springer Science+Business Media, LLC, 2007 Singh Ravindra Centre for Applied Research in Electronics (CARE), Indian Institute of Technology Delhi, Hauz Khas, 110016, New Delhi, India aut Kumar Mahesh Centre for Applied Research in Electronics (CARE), Indian Institute of Technology Delhi, Hauz Khas, 110016, New Delhi, India aut Chandra Sudhir Centre for Applied Research in Electronics (CARE), Indian Institute of Technology Delhi, Hauz Khas, 110016, New Delhi, India aut Journal of Materials Science Kluwer Academic Publishers-Plenum Publishers; http://www.springer-ny.com 42/12(2007-06-01), 4675-4683 0022-2461 42:12<4675 2007 42 10853 https://doi.org/10.1007/s10853-006-0372-5 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10853-006-0372-5 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Singh Ravindra Centre for Applied Research in Electronics (CARE), Indian Institute of Technology Delhi, Hauz Khas, 110016, New Delhi, India aut NATIONALLICENCE 700 1- Kumar Mahesh Centre for Applied Research in Electronics (CARE), Indian Institute of Technology Delhi, Hauz Khas, 110016, New Delhi, India aut NATIONALLICENCE 700 1- Chandra Sudhir Centre for Applied Research in Electronics (CARE), Indian Institute of Technology Delhi, Hauz Khas, 110016, New Delhi, India aut NATIONALLICENCE 773 0- Journal of Materials Science Kluwer Academic Publishers-Plenum Publishers; http://www.springer-ny.com 42/12(2007-06-01), 4675-4683 0022-2461 42:12<4675 2007 42 10853 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer