caa a22 4500 463225538 CHVBK 20180405153225.0 cr unu---uuuuu 170326e20071101xx s 000 0 eng 10.1007/s10853-007-1921-2 doi (NATIONALLICENCE)springer-10.1007/s10853-007-1921-2 Transport study of a novel polyfluorene/poly(p-phenylenevinylene) copolymer by various mobility models [Elektronische Daten] [Lin Ke, Ronald Han, Chellappan Vijila, Soo Chua] The polyfluorene/poly(p-phenylenevinylene) copolymer based hole-only devices are fabricated and the current-voltage characteristics are measured as a function of temperature. The hole current is fitted well with space-charge limited and field-dependent mobility model, which provides a direct measurement of the hole mobility μ as a function of electric field E and temperature. The mobility is fitted with existing Gill's model, Gaussian disorder model, correlated Gaussian disorder model and Brownian motion model. Energy hopping time and activation energy are obtained from Brownian motion model. Microscopic transport parameters are derived and a consistent picture of the influence of the molecular structure of the polymer on the charge transport is depicted. For the polyfluorene/poly(p-phenylenevinylene) copolymer, although with a high degree of irregularity in structure and larger energetic disorder, the two bulky structure favors charge delocalization and remove defect sites, results in a higher mobility. The results suggest space-charge limited and field-dependent mobility model combine with various mobility model, include Brownian motion model, is a useful technique to study charge transport in thin films with thicknesses close to those used in real devices. Springer Science+Business Media, LLC, 2007 Ke Lin Institute of Materials Research and Engineering, 3 Research Link, 117602, Singapore, Singapore aut Han Ronald Center of Optoelectronics, National University of Singapore, 10 Kent Ridge Crescent, 119260, Singapore, Singapore aut Vijila Chellappan Institute of Materials Research and Engineering, 3 Research Link, 117602, Singapore, Singapore aut Chua Soo Institute of Materials Research and Engineering, 3 Research Link, 117602, Singapore, Singapore aut Journal of Materials Science Springer US; http://www.springer-ny.com 42/22(2007-11-01), 9176-9180 0022-2461 42:22<9176 2007 42 10853 https://doi.org/10.1007/s10853-007-1921-2 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10853-007-1921-2 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Ke Lin Institute of Materials Research and Engineering, 3 Research Link, 117602, Singapore, Singapore aut NATIONALLICENCE 700 1- Han Ronald Center of Optoelectronics, National University of Singapore, 10 Kent Ridge Crescent, 119260, Singapore, Singapore aut NATIONALLICENCE 700 1- Vijila Chellappan Institute of Materials Research and Engineering, 3 Research Link, 117602, Singapore, Singapore aut NATIONALLICENCE 700 1- Chua Soo Institute of Materials Research and Engineering, 3 Research Link, 117602, Singapore, Singapore aut NATIONALLICENCE 773 0- Journal of Materials Science Springer US; http://www.springer-ny.com 42/22(2007-11-01), 9176-9180 0022-2461 42:22<9176 2007 42 10853 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer