caa a22 4500 463225600 CHVBK 20180405153226.0 cr unu---uuuuu 170326e20071101xx s 000 0 eng 10.1007/s10853-007-1869-2 doi (NATIONALLICENCE)springer-10.1007/s10853-007-1869-2 Synthesis and characterization of morphologically different high purity gallium oxide nanopowders [Elektronische Daten] [U. Rambabu, N. Munirathnam, T. Prakash, B. Vengalrao, S. Buddhudu] High purity gallium oxide nanopowders have been synthesized by using a simple precipitation technique with calcination at elevated temperature. From the X-ray pattern, the phase purity of the synthesized powders was confirmed as β-Ga2O3. Elemental quantification (stoichiometry) of Ga2O3 was also examined from the X-ray energy dispersive analysis (EDAX). Based on the recorded Fourier Transform Infrared (FTIR) spectrum of Ga2O3, the IR bands due to Ga-O bond and crystal lattice vibrations have been identified in the wavenumber range 400-4,000cm−1. From the measured SEM images, it is obvious to notice that the pH value has been playing a dominant role in obtaining morphologically different gallium oxide nanopowders. Thermogravimetric analysis reveals 8.3% of weight loss when the sample was heated to the temperature of 1,100°C from the room temperature, which also shows a crystalline phase transformation. It is very interesting to report that a broad blue emission at 455nm has been measured from the synthesized gallium oxide nanopowders. Springer Science+Business Media, LLC, 2007 Rambabu U. High Purity Materials Laboratory, IDA Phase-III, Centre for Materials for Electronics Technology (C-MET), 500051, Cherlapally, Hyderabad, India aut Munirathnam N. High Purity Materials Laboratory, IDA Phase-III, Centre for Materials for Electronics Technology (C-MET), 500051, Cherlapally, Hyderabad, India aut Prakash T. High Purity Materials Laboratory, IDA Phase-III, Centre for Materials for Electronics Technology (C-MET), 500051, Cherlapally, Hyderabad, India aut Vengalrao B. Department of Physics, Sri Venkateshwara University, 517502, Tirupati, India aut Buddhudu S. Department of Physics, Sri Venkateshwara University, 517502, Tirupati, India aut Journal of Materials Science Springer US; http://www.springer-ny.com 42/22(2007-11-01), 9262-9266 0022-2461 42:22<9262 2007 42 10853 https://doi.org/10.1007/s10853-007-1869-2 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10853-007-1869-2 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Rambabu U. High Purity Materials Laboratory, IDA Phase-III, Centre for Materials for Electronics Technology (C-MET), 500051, Cherlapally, Hyderabad, India aut NATIONALLICENCE 700 1- Munirathnam N. High Purity Materials Laboratory, IDA Phase-III, Centre for Materials for Electronics Technology (C-MET), 500051, Cherlapally, Hyderabad, India aut NATIONALLICENCE 700 1- Prakash T. High Purity Materials Laboratory, IDA Phase-III, Centre for Materials for Electronics Technology (C-MET), 500051, Cherlapally, Hyderabad, India aut NATIONALLICENCE 700 1- Vengalrao B. Department of Physics, Sri Venkateshwara University, 517502, Tirupati, India aut NATIONALLICENCE 700 1- Buddhudu S. Department of Physics, Sri Venkateshwara University, 517502, Tirupati, India aut NATIONALLICENCE 773 0- Journal of Materials Science Springer US; http://www.springer-ny.com 42/22(2007-11-01), 9262-9266 0022-2461 42:22<9262 2007 42 10853 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer