caa a22 4500 463226151 CHVBK 20180405153227.0 cr unu---uuuuu 170326e20070901xx s 000 0 eng 10.1007/s10853-007-1731-6 doi (NATIONALLICENCE)springer-10.1007/s10853-007-1731-6 Fatigue, retention and switching properties of PLZT(x/30/70) thin films with various La concentrations [Elektronische Daten] [Seong Kang, Yang Joung] We investigated the fatigue, retention and switching properties of PLZT(x/30/70) thin films with various La concentrations. By applying 109 square pulse switching cycles with a voltage of ±5V to study the fatigue properties of the film, we found that the decrease of the initial polarization is improved from 64% to 40% as the La concentration is increased from 0mol% to 10mol%. The retention properties are also greatly improved as the decrease of the initial polarization decrease is reduced from 47% to 9% after 105s. The switching time is decreased from 0.8μs to 0.55μs as the La concentration is increased. While the dielectric constant of the PLZT thin films increases from 450 to 600 as the La concentration is increased, the dielectric loss and leakage current density measured at 100kV/cm decrease from 0.075 to 0.025 and from 5.83×10−7 to 1.38×10−7A/cm2, respectively. By analyzing the hysteresis loops of the PLZT thin film measured at 175kV/cm, we found that the remnant polarization and coercive electric field decrease from 20.8μC/cm2 to 10.5μC/cm2 and from 54.48kV/cm to 32.12kV/cm, respectively, as the La concentration is increased. Springer Science+Business Media, LLC, 2007 Kang Seong Department of Electrical & Semiconductor Engineering, Chonnam National University, 550-749, Yosu, Korea aut Joung Yang Department of Electrical & Semiconductor Engineering, Chonnam National University, 550-749, Yosu, Korea aut Journal of Materials Science Kluwer Academic Publishers-Plenum Publishers; http://www.springer-ny.com 42/18(2007-09-01), 7899-7905 0022-2461 42:18<7899 2007 42 10853 https://doi.org/10.1007/s10853-007-1731-6 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10853-007-1731-6 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Kang Seong Department of Electrical & Semiconductor Engineering, Chonnam National University, 550-749, Yosu, Korea aut NATIONALLICENCE 700 1- Joung Yang Department of Electrical & Semiconductor Engineering, Chonnam National University, 550-749, Yosu, Korea aut NATIONALLICENCE 773 0- Journal of Materials Science Kluwer Academic Publishers-Plenum Publishers; http://www.springer-ny.com 42/18(2007-09-01), 7899-7905 0022-2461 42:18<7899 2007 42 10853 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer