caa a22 4500 463226208 CHVBK 20180405153227.0 cr unu---uuuuu 170326e20070901xx s 000 0 eng 10.1007/s10853-007-1628-4 doi (NATIONALLICENCE)springer-10.1007/s10853-007-1628-4 Fabrication and characterization of Ge nanocrystalline growth by ion implantation in SiO2 matrix [Elektronische Daten] [S. Mestanza, I. Doi, J. Swart, N. Frateschi] Ge nanocrystallites (Ge-nc) have been formed by ion implantation of Ge+74 into SiO2 matrix, thermally grown on p-type Si substrates. The Ge-nc are examined by Raman spectroscopy, photoluminescence (PL) and Fourier transform infrared spectroscopy (FTIR). The samples were prepared with various implantation doses [0.5; 0.8; 1; 2; 3; 4]×1016cm−2 with 250keV energy. After implantation, the samples were annealed at 1,000°C in forming gas atmosphere for 1h. Raman intensity variation with implantation doses is observed, particularly for the peak near 304cm−1. It was found that the sample implanted with a doses of 2×1016cm−2 shows maximum photoluminescence intensity at about 3.2eV. FTIR analysis shows that the SiO2 film moved off stoichiometry due to Ge+74 ion implantation, and Ge oxides are formed in it. This result is shown as a reduction of GeOx at exactly the doses corresponding to the maximum blue-violet PL emission and the largest Raman emission at 304cm−1. This intensity reduction can be attributed to a larger portion of broken Ge-O bonds enabling a greater number of Ge atoms to participate in the cluster formation and at the same time increasing the oxygen vacancies. This idea would explain why the FTIR peak decreases at the same implantation doses where the PL intensity increases. Springer Science+Business Media, LLC, 2007 Mestanza S. Center for Semiconductor Components, State University of Campinas, P. O. Box 6061, 13083-870, Campinas, SP, Brazil aut Doi I. Center for Semiconductor Components, State University of Campinas, P. O. Box 6061, 13083-870, Campinas, SP, Brazil aut Swart J. Center for Semiconductor Components, State University of Campinas, P. O. Box 6061, 13083-870, Campinas, SP, Brazil aut Frateschi N. Center for Semiconductor Components, State University of Campinas, P. O. Box 6061, 13083-870, Campinas, SP, Brazil aut Journal of Materials Science Kluwer Academic Publishers-Plenum Publishers; http://www.springer-ny.com 42/18(2007-09-01), 7757-7761 0022-2461 42:18<7757 2007 42 10853 https://doi.org/10.1007/s10853-007-1628-4 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10853-007-1628-4 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Mestanza S. Center for Semiconductor Components, State University of Campinas, P. O. Box 6061, 13083-870, Campinas, SP, Brazil aut NATIONALLICENCE 700 1- Doi I. Center for Semiconductor Components, State University of Campinas, P. O. Box 6061, 13083-870, Campinas, SP, Brazil aut NATIONALLICENCE 700 1- Swart J. Center for Semiconductor Components, State University of Campinas, P. O. Box 6061, 13083-870, Campinas, SP, Brazil aut NATIONALLICENCE 700 1- Frateschi N. Center for Semiconductor Components, State University of Campinas, P. O. Box 6061, 13083-870, Campinas, SP, Brazil aut NATIONALLICENCE 773 0- Journal of Materials Science Kluwer Academic Publishers-Plenum Publishers; http://www.springer-ny.com 42/18(2007-09-01), 7757-7761 0022-2461 42:18<7757 2007 42 10853 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer