caa a22 4500 463226631 CHVBK 20180405153229.0 cr unu---uuuuu 170326e20070201xx s 000 0 eng 10.1007/s10853-006-1046-z doi (NATIONALLICENCE)springer-10.1007/s10853-006-1046-z High mobility organic transistor patterned by the shadow-mask with all structure on a plastic substrate [Elektronische Daten] [Joo-Won Lee, Byeong-Kwon Ju, Jin Jang, Young-Soo Yoon, Jai-Kyeong Kim] Pentacene thin film transistors fabricated without photolithographic patterning were fabricated on the plastic substrates. Both the organic/inorganic thin films and metallic electrode were patterned by shifting the position of the shadow-mask which accompanies the substrate throughout the deposition process. By using an optically transparent zirconium oxide (ZrO2) as a gate insulator and octadecyltrimethoxysilane (OTMS) as an organic molecule for self-assembled monolayer (SAM) to increase the adhesion between the plastic substrate and gate insulator and the mobility with surface treatment, high-performance transistor with field effect mobility 0.66cm2/Vs and I on/I off>105 was formed on the plastic substrate. This technique will be applicable to all structure deposited at low temperature and suitable for an easy process for flexible display. Springer Science+Business Media, LLC, 2007 Lee Joo-Won Opto-Electric Materials Research Center, Korea Institute of Science and Technology, 136-791, Seoul, Korea aut Ju Byeong-Kwon Department of Electrical Engineering, Korea University, Anam-Dong, Seongbuk-Gu, 136-701, Seoul, Korea aut Jang Jin Department of Physics, Kyunghee University, 130-701, Seoul, Korea aut Yoon Young-Soo Department of Advanced Technology Fusion, Konkuk University, Hwayang-dong Gwangjin-gu, 143-701, Seoul, Korea aut Kim Jai-Kyeong Opto-Electric Materials Research Center, Korea Institute of Science and Technology, 136-791, Seoul, Korea aut Journal of Materials Science Kluwer Academic Publishers-Plenum Publishers; http://www.springer-ny.com 42/3(2007-02-01), 1026-1030 0022-2461 42:3<1026 2007 42 10853 https://doi.org/10.1007/s10853-006-1046-z text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10853-006-1046-z text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Lee Joo-Won Opto-Electric Materials Research Center, Korea Institute of Science and Technology, 136-791, Seoul, Korea aut NATIONALLICENCE 700 1- Ju Byeong-Kwon Department of Electrical Engineering, Korea University, Anam-Dong, Seongbuk-Gu, 136-701, Seoul, Korea aut NATIONALLICENCE 700 1- Jang Jin Department of Physics, Kyunghee University, 130-701, Seoul, Korea aut NATIONALLICENCE 700 1- Yoon Young-Soo Department of Advanced Technology Fusion, Konkuk University, Hwayang-dong Gwangjin-gu, 143-701, Seoul, Korea aut NATIONALLICENCE 700 1- Kim Jai-Kyeong Opto-Electric Materials Research Center, Korea Institute of Science and Technology, 136-791, Seoul, Korea aut NATIONALLICENCE 773 0- Journal of Materials Science Kluwer Academic Publishers-Plenum Publishers; http://www.springer-ny.com 42/3(2007-02-01), 1026-1030 0022-2461 42:3<1026 2007 42 10853 Metadata rights reserved Springer special CC-BY-NC licence nationallicence SWISSBIB 463226631 BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer