<?xml version="1.0" encoding="UTF-8"?>
<collection xmlns="http://www.loc.gov/MARC21/slim">
 <record>
  <leader>     caa a22        4500</leader>
  <controlfield tag="001">463226666</controlfield>
  <controlfield tag="003">CHVBK</controlfield>
  <controlfield tag="005">20180405153229.0</controlfield>
  <controlfield tag="007">cr unu---uuuuu</controlfield>
  <controlfield tag="008">170326e20070201xx      s     000 0 eng  </controlfield>
  <datafield tag="024" ind1="7" ind2="0">
   <subfield code="a">10.1007/s10853-006-0017-8</subfield>
   <subfield code="2">doi</subfield>
  </datafield>
  <datafield tag="035" ind1=" " ind2=" ">
   <subfield code="a">(NATIONALLICENCE)springer-10.1007/s10853-006-0017-8</subfield>
  </datafield>
  <datafield tag="245" ind1="0" ind2="0">
   <subfield code="a">Effect of sintering conditions on resistivity of nanoparticle Mn-Zn ferrite prepared by nitrilotriacetate precursor method</subfield>
   <subfield code="h">[Elektronische Daten]</subfield>
   <subfield code="c">[Rudraji Tangsali, Satish Keluskar, Ganpat Naik, J. Budkuley]</subfield>
  </datafield>
  <datafield tag="520" ind1="3" ind2=" ">
   <subfield code="a">Mn-Zn spinel ferrites are most important class of magnetic materials owing to their high saturation magnetization, high permeability, low loss and interesting applications in various fields. The magnetic as well as electrical properties of these ferrites depend on relative distribution of cations at different sites, grain size, sintering conditions as well as preparative conditions. Nanoparticle Mn-Zn ferrite material having general formula Mn x Zn1−x Fe2O4 with x=0.35/0.4/0.45/0.5/0.55/0.6/0.65 were synthesized using nitrilotriacetate precursor method and characterized using standard techniques. The resistivity measurements of all these samples were carried out after sintering the same in nitrogen atmosphere at 1,050°C/1,150°C/1,250°C/1,350°C, respectively. High resistivity values obtained for the system of materials would provide a low eddy current loss material for wide ranging applications in electronics and telecommunications. Semiconductor like behavior of the material with resistivity variation over large range of temperature is ideal characteristic essential for materials in sensor applications.</subfield>
  </datafield>
  <datafield tag="540" ind1=" " ind2=" ">
   <subfield code="a">Springer Science+Business Media, Inc., 2007</subfield>
  </datafield>
  <datafield tag="700" ind1="1" ind2=" ">
   <subfield code="a">Tangsali</subfield>
   <subfield code="D">Rudraji</subfield>
   <subfield code="u">Department of Physics, Goa University, Taleigao Plateau, 403206, Panjim, Goa, India</subfield>
   <subfield code="4">aut</subfield>
  </datafield>
  <datafield tag="700" ind1="1" ind2=" ">
   <subfield code="a">Keluskar</subfield>
   <subfield code="D">Satish</subfield>
   <subfield code="u">Department of Physics, P. E. S. College of Arts and Science, Ponda, Goa, India</subfield>
   <subfield code="4">aut</subfield>
  </datafield>
  <datafield tag="700" ind1="1" ind2=" ">
   <subfield code="a">Naik</subfield>
   <subfield code="D">Ganpat</subfield>
   <subfield code="u">Department of Chemistry, Goa University, Taleigao Plateau, 403206, Panjim, Goa, India</subfield>
   <subfield code="4">aut</subfield>
  </datafield>
  <datafield tag="700" ind1="1" ind2=" ">
   <subfield code="a">Budkuley</subfield>
   <subfield code="D">J.</subfield>
   <subfield code="u">Department of Chemistry, Goa University, Taleigao Plateau, 403206, Panjim, Goa, India</subfield>
   <subfield code="4">aut</subfield>
  </datafield>
  <datafield tag="773" ind1="0" ind2=" ">
   <subfield code="t">Journal of Materials Science</subfield>
   <subfield code="d">Kluwer Academic Publishers-Plenum Publishers; http://www.springer-ny.com</subfield>
   <subfield code="g">42/3(2007-02-01), 878-882</subfield>
   <subfield code="x">0022-2461</subfield>
   <subfield code="q">42:3&lt;878</subfield>
   <subfield code="1">2007</subfield>
   <subfield code="2">42</subfield>
   <subfield code="o">10853</subfield>
  </datafield>
  <datafield tag="856" ind1="4" ind2="0">
   <subfield code="u">https://doi.org/10.1007/s10853-006-0017-8</subfield>
   <subfield code="q">text/html</subfield>
   <subfield code="z">Onlinezugriff via DOI</subfield>
  </datafield>
  <datafield tag="908" ind1=" " ind2=" ">
   <subfield code="D">1</subfield>
   <subfield code="a">research-article</subfield>
   <subfield code="2">jats</subfield>
  </datafield>
  <datafield tag="950" ind1=" " ind2=" ">
   <subfield code="B">NATIONALLICENCE</subfield>
   <subfield code="P">856</subfield>
   <subfield code="E">40</subfield>
   <subfield code="u">https://doi.org/10.1007/s10853-006-0017-8</subfield>
   <subfield code="q">text/html</subfield>
   <subfield code="z">Onlinezugriff via DOI</subfield>
  </datafield>
  <datafield tag="950" ind1=" " ind2=" ">
   <subfield code="B">NATIONALLICENCE</subfield>
   <subfield code="P">700</subfield>
   <subfield code="E">1-</subfield>
   <subfield code="a">Tangsali</subfield>
   <subfield code="D">Rudraji</subfield>
   <subfield code="u">Department of Physics, Goa University, Taleigao Plateau, 403206, Panjim, Goa, India</subfield>
   <subfield code="4">aut</subfield>
  </datafield>
  <datafield tag="950" ind1=" " ind2=" ">
   <subfield code="B">NATIONALLICENCE</subfield>
   <subfield code="P">700</subfield>
   <subfield code="E">1-</subfield>
   <subfield code="a">Keluskar</subfield>
   <subfield code="D">Satish</subfield>
   <subfield code="u">Department of Physics, P. E. S. College of Arts and Science, Ponda, Goa, India</subfield>
   <subfield code="4">aut</subfield>
  </datafield>
  <datafield tag="950" ind1=" " ind2=" ">
   <subfield code="B">NATIONALLICENCE</subfield>
   <subfield code="P">700</subfield>
   <subfield code="E">1-</subfield>
   <subfield code="a">Naik</subfield>
   <subfield code="D">Ganpat</subfield>
   <subfield code="u">Department of Chemistry, Goa University, Taleigao Plateau, 403206, Panjim, Goa, India</subfield>
   <subfield code="4">aut</subfield>
  </datafield>
  <datafield tag="950" ind1=" " ind2=" ">
   <subfield code="B">NATIONALLICENCE</subfield>
   <subfield code="P">700</subfield>
   <subfield code="E">1-</subfield>
   <subfield code="a">Budkuley</subfield>
   <subfield code="D">J.</subfield>
   <subfield code="u">Department of Chemistry, Goa University, Taleigao Plateau, 403206, Panjim, Goa, India</subfield>
   <subfield code="4">aut</subfield>
  </datafield>
  <datafield tag="950" ind1=" " ind2=" ">
   <subfield code="B">NATIONALLICENCE</subfield>
   <subfield code="P">773</subfield>
   <subfield code="E">0-</subfield>
   <subfield code="t">Journal of Materials Science</subfield>
   <subfield code="d">Kluwer Academic Publishers-Plenum Publishers; http://www.springer-ny.com</subfield>
   <subfield code="g">42/3(2007-02-01), 878-882</subfield>
   <subfield code="x">0022-2461</subfield>
   <subfield code="q">42:3&lt;878</subfield>
   <subfield code="1">2007</subfield>
   <subfield code="2">42</subfield>
   <subfield code="o">10853</subfield>
  </datafield>
  <datafield tag="900" ind1=" " ind2="7">
   <subfield code="a">Metadata rights reserved</subfield>
   <subfield code="b">Springer special CC-BY-NC licence</subfield>
   <subfield code="2">nationallicence</subfield>
  </datafield>
  <datafield tag="898" ind1=" " ind2=" ">
   <subfield code="a">BK010053</subfield>
   <subfield code="b">XK010053</subfield>
   <subfield code="c">XK010000</subfield>
  </datafield>
  <datafield tag="949" ind1=" " ind2=" ">
   <subfield code="B">NATIONALLICENCE</subfield>
   <subfield code="F">NATIONALLICENCE</subfield>
   <subfield code="b">NL-springer</subfield>
  </datafield>
 </record>
</collection>
