caa a22 4500 463226917 CHVBK 20180405153229.0 cr unu---uuuuu 170326e20070201xx s 000 0 eng 10.1007/s10853-006-0010-2 doi (NATIONALLICENCE)springer-10.1007/s10853-006-0010-2 Study of anodization parameters effects on photoconductivity of porous silicon [Elektronische Daten] [H. Khalili, R. Dariani, A. MortezaAli, V. Daadmehr, K. Robbie] We have prepared porous silicon by etching p-type crystalline silicon in different conditions such as: varying electrolyte concentration, current density, and etching time. The primary objective of this research is to develop a scientifically based technique for the measurement of photosensitivity. One such technique involves measuring the photoconductivity of the porous silicon under halogen lamp irradiation. Our photoconductivity measurements agree with photoluminescence measurements in previous work, and demonstrate the direct transition of porous silicon. Varied etching conditions change the peak of photoconductivity from 600 to 520nm (from 2.13eV to 2.4eV) as the porosity of the layer gradually increases, and the photoconductivity band also becomes slightly more intense. The photoconductivity peak shift toward shorter wavelength was interpreted to be the result of band gap widening. We observe two distinct regimes in the time decay of photoconductivity, fast decay and steady state, that arise from the recombination process and electron-hole asymmetry near the Fermi surface. Experimental measurements of photoconductivity give useful information about the band gap, band structure, and variation of transport properties due to the micro-structural porosity created during the etching process. Springer Science+Business Media, Inc., 2006 Khalili H. Department of Physics, Alzahra University, Vanak, 19938, Tehran, Iran aut Dariani R. Department of Physics, Alzahra University, Vanak, 19938, Tehran, Iran aut MortezaAli A. Department of Physics, Alzahra University, Vanak, 19938, Tehran, Iran aut Daadmehr V. Department of Physics, Alzahra University, Vanak, 19938, Tehran, Iran aut Robbie K. Department of Physics, Queen's University, K7L 3N6, Kingston, ON, Canada aut Journal of Materials Science Kluwer Academic Publishers-Plenum Publishers; http://www.springer-ny.com 42/3(2007-02-01), 908-913 0022-2461 42:3<908 2007 42 10853 https://doi.org/10.1007/s10853-006-0010-2 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10853-006-0010-2 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Khalili H. Department of Physics, Alzahra University, Vanak, 19938, Tehran, Iran aut NATIONALLICENCE 700 1- Dariani R. Department of Physics, Alzahra University, Vanak, 19938, Tehran, Iran aut NATIONALLICENCE 700 1- MortezaAli A. Department of Physics, Alzahra University, Vanak, 19938, Tehran, Iran aut NATIONALLICENCE 700 1- Daadmehr V. Department of Physics, Alzahra University, Vanak, 19938, Tehran, Iran aut NATIONALLICENCE 700 1- Robbie K. Department of Physics, Queen's University, K7L 3N6, Kingston, ON, Canada aut NATIONALLICENCE 773 0- Journal of Materials Science Kluwer Academic Publishers-Plenum Publishers; http://www.springer-ny.com 42/3(2007-02-01), 908-913 0022-2461 42:3<908 2007 42 10853 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer