caa a22 4500 46322714X CHVBK 20180405153230.0 cr unu---uuuuu 170326e20070501xx s 000 0 eng 10.1007/s10853-006-0239-9 doi (NATIONALLICENCE)springer-10.1007/s10853-006-0239-9 Contact damage initiation in silicon nitride in Hertzian indentation: role of microstructure [Elektronische Daten] [Guang-Yong Lin, Ramaswamy Lakshminarayanan, Dinesh Shetty] A bearing-grade silicon nitride with fine microstructure and a turbine-grade silicon nitride with coarse microstructure were studied with respect to the influence of their microstructures on (a) crack-growth-resistance behavior, (b) strength degradation due to Vickers indentation, and (c) crack initiation in quasi-static indentation with WC spheres. The turbine grade exhibited strong rising crack-growth resistance and less strength degradation due to Vickers indentation as compared to the bearing grade. Partial-ring or C cracks initiated in Hertzian indentation and the critical loads exhibited linear (Auerbach) variation with indenter radius above a critical value. For smaller radius, indentation plasticity preceded C-crack initiation. The bearing grade exhibited higher critical loads for C-crack initiation, but showed greater extension toward a ring crack than the turbine grade. These differences in crack initiation and growth were consistent with the differences in crack initiation and propagation toughness of the two grades. A ball-on-ball impact analysis was used to predict the critical velocities for initiating C cracks in the impact of silicon nitride surfaces with WC spheres. Springer Science+Business Media, LLC, 2007 Lin Guang-Yong University of Utah, 84112, Salt Lake City, UT, USA aut Lakshminarayanan Ramaswamy University of Utah, 84112, Salt Lake City, UT, USA aut Shetty Dinesh University of Utah, 84112, Salt Lake City, UT, USA aut Journal of Materials Science Springer US; http://www.springer-ny.com 42/10(2007-05-01), 3508-3519 0022-2461 42:10<3508 2007 42 10853 https://doi.org/10.1007/s10853-006-0239-9 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10853-006-0239-9 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Lin Guang-Yong University of Utah, 84112, Salt Lake City, UT, USA aut NATIONALLICENCE 700 1- Lakshminarayanan Ramaswamy University of Utah, 84112, Salt Lake City, UT, USA aut NATIONALLICENCE 700 1- Shetty Dinesh University of Utah, 84112, Salt Lake City, UT, USA aut NATIONALLICENCE 773 0- Journal of Materials Science Springer US; http://www.springer-ny.com 42/10(2007-05-01), 3508-3519 0022-2461 42:10<3508 2007 42 10853 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer