caa a22 4500 463228596 CHVBK 20180405153234.0 cr unu---uuuuu 170326e20070901xx s 000 0 eng 10.1007/s10853-007-1556-3 doi (NATIONALLICENCE)springer-10.1007/s10853-007-1556-3 Electrical properties and positron annihilation study of (Ba1− x Ho x )TiO3 ceramics [Elektronische Daten] [Fanggao Chang, Tao Li, Yongxia Ge, Zhenping Chen, Zhongshi Liu, Xiping Jing] DC resistivity, dielectric constant, dielectric loss and positron annihilation spectra of (Ba1−x Ho x )TiO3 ceramics have been measured as a function of holmium concentration x. It has been found that the DC resistivity of (Ba1−x Ho x )TiO3 is strongly dependent on the Ho content: it decreases three orders of magnitude and reaches a minimum at x=0.4%. Doping with 0.6% holmium increases the permittivity of BaTiO3 by approximately three times (from ∼1,300 to ∼4,000), with only a slight increase in the corresponding dielectric loss. The local electron density and defect concentration estimated using positron annihilation technique conforms well to the features found in the dielectric and resistivity measurements. The results have been discussed in terms of a mixed compensation model. Springer Science+Business Media, LLC, 2007 Chang Fanggao College of Physics and Information Engineering, Henan Normal University, 453007, Xinxiang, P.R. China aut Li Tao Department of Technology and Physics, Zhengzhou University of Light Industry, 450002, Zhengzhou, P.R. China aut Ge Yongxia College of Physics and Information Engineering, Henan Normal University, 453007, Xinxiang, P.R. China aut Chen Zhenping Department of Technology and Physics, Zhengzhou University of Light Industry, 450002, Zhengzhou, P.R. China aut Liu Zhongshi College of Chemistry & Molecular Engineering, Peking University, 100871, Beijing, P.R. China aut Jing Xiping College of Chemistry & Molecular Engineering, Peking University, 100871, Beijing, P.R. China aut Journal of Materials Science Kluwer Academic Publishers-Plenum Publishers; http://www.springer-ny.com 42/17(2007-09-01), 7109-7115 0022-2461 42:17<7109 2007 42 10853 https://doi.org/10.1007/s10853-007-1556-3 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10853-007-1556-3 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Chang Fanggao College of Physics and Information Engineering, Henan Normal University, 453007, Xinxiang, P.R. China aut NATIONALLICENCE 700 1- Li Tao Department of Technology and Physics, Zhengzhou University of Light Industry, 450002, Zhengzhou, P.R. China aut NATIONALLICENCE 700 1- Ge Yongxia College of Physics and Information Engineering, Henan Normal University, 453007, Xinxiang, P.R. China aut NATIONALLICENCE 700 1- Chen Zhenping Department of Technology and Physics, Zhengzhou University of Light Industry, 450002, Zhengzhou, P.R. China aut NATIONALLICENCE 700 1- Liu Zhongshi College of Chemistry & Molecular Engineering, Peking University, 100871, Beijing, P.R. China aut NATIONALLICENCE 700 1- Jing Xiping College of Chemistry & Molecular Engineering, Peking University, 100871, Beijing, P.R. China aut NATIONALLICENCE 773 0- Journal of Materials Science Kluwer Academic Publishers-Plenum Publishers; http://www.springer-ny.com 42/17(2007-09-01), 7109-7115 0022-2461 42:17<7109 2007 42 10853 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer