caa a22 4500 46322874X CHVBK 20180405153235.0 cr unu---uuuuu 170326e20070901xx s 000 0 eng 10.1007/s10853-007-1575-0 doi (NATIONALLICENCE)springer-10.1007/s10853-007-1575-0 Crystalline quality and phase purity of CVD diamond films studied by Raman spectroscopy [Elektronische Daten] [W. Fortunato, A. Chiquito, J. Galzerani, J. Moro] Two series of diamond films grown—at different temperatures—by two chemical vapor deposition (CVD) methods, i.e., hot filament (HFCVD) and microwave-plasma (MPCVD), were investigated. Raman spectroscopy and scanning electron microscopy were employed to perform a study of both crystalline quality and phase purity of the films grown by the two techniques. It was found that high phase purity can be attained by both methods. However, at high temperatures, the MPCVD technique produced films with higher crystalline quality as compared to those grown by HFCVD. Finally, in order to shed some light into the mechanisms responsible for the lower crystalline quality observed in the HFCVD films, a study based in the phonon confinement model and stress was accomplished. Springer Science+Business Media, LLC, 2007 Fortunato W. Lab de Semicondutores, Departamento de Física, Universidade Federal de São Carlos, CP 676, 13565-905, São Carlos, Brazil aut Chiquito A. Lab de Semicondutores, Departamento de Física, Universidade Federal de São Carlos, CP 676, 13565-905, São Carlos, Brazil aut Galzerani J. Lab de Semicondutores, Departamento de Física, Universidade Federal de São Carlos, CP 676, 13565-905, São Carlos, Brazil aut Moro J. Lab de Diamantes, Universidade São Francisco, 13231-900, Itatiba, Brazil aut Journal of Materials Science Kluwer Academic Publishers-Plenum Publishers; http://www.springer-ny.com 42/17(2007-09-01), 7331-7336 0022-2461 42:17<7331 2007 42 10853 https://doi.org/10.1007/s10853-007-1575-0 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10853-007-1575-0 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Fortunato W. Lab de Semicondutores, Departamento de Física, Universidade Federal de São Carlos, CP 676, 13565-905, São Carlos, Brazil aut NATIONALLICENCE 700 1- Chiquito A. Lab de Semicondutores, Departamento de Física, Universidade Federal de São Carlos, CP 676, 13565-905, São Carlos, Brazil aut NATIONALLICENCE 700 1- Galzerani J. Lab de Semicondutores, Departamento de Física, Universidade Federal de São Carlos, CP 676, 13565-905, São Carlos, Brazil aut NATIONALLICENCE 700 1- Moro J. Lab de Diamantes, Universidade São Francisco, 13231-900, Itatiba, Brazil aut NATIONALLICENCE 773 0- Journal of Materials Science Kluwer Academic Publishers-Plenum Publishers; http://www.springer-ny.com 42/17(2007-09-01), 7331-7336 0022-2461 42:17<7331 2007 42 10853 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer