caa a22 4500 463229398 CHVBK 20180405153237.0 cr unu---uuuuu 170326e20070701xx s 000 0 eng 10.1007/s10853-006-0901-2 doi (NATIONALLICENCE)springer-10.1007/s10853-006-0901-2 The structural deformations in the Si/SiGe system induced by thermal annealing [Elektronische Daten] [Shuqi Zheng, M. Mori, T. Tambo, C. Tatsuyama] The structural deformations in Si/SiGe system during thermal annealing were investigated by means of atomic force microscope (AFM) and high-resolution X-ray diffraction (HRXRD). The (004) rocking curve measurements showed that the obvious fringes of rocking curve obtained from pre-annealing sample were faded out gradually and disappeared completely with increasing the annealing temperature, which indicated that the abrupt Si/SiGe interface was destroyed gradually. The analyses of the peak broadening and relative position of the SiGe epilayer with respect to the Si substrate in high-resolution reciprocal space map (HRRSM) measurements described clearly the formation of mosaic structure in Si/SiGe system. The inner deformation induced the surface corrugate, known as crosshatch morphologies, which was analyzed by AFM measurements. Springer Science+Business Media, LLC, 2007 Zheng Shuqi Department of Materials Science and Engineering, China University of Petroleum Beijing, 102200, Beijing, China aut Mori M. Department of Electrical and Electronic Engineering, Faculty of Engineering, Toyama University, 3190 Gofuku, 930-8555, Toyama, Japan aut Tambo T. Department of Electrical and Electronic Engineering, Faculty of Engineering, Toyama University, 3190 Gofuku, 930-8555, Toyama, Japan aut Tatsuyama C. Department of Electrical and Electronic Engineering, Faculty of Engineering, Toyama University, 3190 Gofuku, 930-8555, Toyama, Japan aut Journal of Materials Science Kluwer Academic Publishers-Plenum Publishers; http://www.springer-ny.com 42/14(2007-07-01), 5312-5317 0022-2461 42:14<5312 2007 42 10853 https://doi.org/10.1007/s10853-006-0901-2 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10853-006-0901-2 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Zheng Shuqi Department of Materials Science and Engineering, China University of Petroleum Beijing, 102200, Beijing, China aut NATIONALLICENCE 700 1- Mori M. Department of Electrical and Electronic Engineering, Faculty of Engineering, Toyama University, 3190 Gofuku, 930-8555, Toyama, Japan aut NATIONALLICENCE 700 1- Tambo T. Department of Electrical and Electronic Engineering, Faculty of Engineering, Toyama University, 3190 Gofuku, 930-8555, Toyama, Japan aut NATIONALLICENCE 700 1- Tatsuyama C. Department of Electrical and Electronic Engineering, Faculty of Engineering, Toyama University, 3190 Gofuku, 930-8555, Toyama, Japan aut NATIONALLICENCE 773 0- Journal of Materials Science Kluwer Academic Publishers-Plenum Publishers; http://www.springer-ny.com 42/14(2007-07-01), 5312-5317 0022-2461 42:14<5312 2007 42 10853 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer