caa a22 4500 463229495 CHVBK 20180405153237.0 cr unu---uuuuu 170326e20070701xx s 000 0 eng 10.1007/s10853-006-1153-x doi (NATIONALLICENCE)springer-10.1007/s10853-006-1153-x Effect of oxygen partial pressure on the electrical and optical properties of highly (200) oriented p-type Ni1− x O films by DC sputtering [Elektronische Daten] [Suman Nandy, Biswajit Saha, Manoj Mitra, K. Chattopadhyay] Thin films of NiO (bunsenite) with (200) preferential orientation were synthesized on glass substrates by direct current sputtering technique in Ar+O2 atmosphere. Nanostructural properties of the NiO films were investigated by X-ray diffraction and also by atomic force microscopic (AFM) studies. Electrical and optical properties of the deposited films were investigated as a function of different partial pressure of oxygen in the sputtering gas mixture during deposition. The films showed p-type electrical conduction and the conductivity depends on the partial pressure of oxygen. The electrical conductivity (σRT) was found to be .0615Scm−1 for films deposited with 100% O2 and its value sharply decreased with the decrease the partial pressure of O2; for example σRT for 50% O2 was 6.139×10−5Scm-1. The mechanism of the origin of p-type electrical conductivity in the NiO film is discussed from the viewpoint of nickel or oxygen vacancies, which generate holes and electrons respectively. X-ray photoelectron spectroscopic studies supported the above argument. Corresponding optical properties showed that the transparency decreases with increasing oxygen partial pressure and the bandgap also decreases. Springer Science+Business Media, LLC, 2007 Nandy Suman Thin Film & Nanoscience Laboratory, Department of Physics, Jadavpur University, 700 032, Kolkata, India aut Saha Biswajit Thin Film & Nanoscience Laboratory, Department of Physics, Jadavpur University, 700 032, Kolkata, India aut Mitra Manoj Nanoscience and Technology Center, Jadavpur University, 700 032, Kolkata, India aut Chattopadhyay K. Thin Film & Nanoscience Laboratory, Department of Physics, Jadavpur University, 700 032, Kolkata, India aut Journal of Materials Science Kluwer Academic Publishers-Plenum Publishers; http://www.springer-ny.com 42/14(2007-07-01), 5766-5772 0022-2461 42:14<5766 2007 42 10853 https://doi.org/10.1007/s10853-006-1153-x text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10853-006-1153-x text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Nandy Suman Thin Film & Nanoscience Laboratory, Department of Physics, Jadavpur University, 700 032, Kolkata, India aut NATIONALLICENCE 700 1- Saha Biswajit Thin Film & Nanoscience Laboratory, Department of Physics, Jadavpur University, 700 032, Kolkata, India aut NATIONALLICENCE 700 1- Mitra Manoj Nanoscience and Technology Center, Jadavpur University, 700 032, Kolkata, India aut NATIONALLICENCE 700 1- Chattopadhyay K. Thin Film & Nanoscience Laboratory, Department of Physics, Jadavpur University, 700 032, Kolkata, India aut NATIONALLICENCE 773 0- Journal of Materials Science Kluwer Academic Publishers-Plenum Publishers; http://www.springer-ny.com 42/14(2007-07-01), 5766-5772 0022-2461 42:14<5766 2007 42 10853 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer