caa a22 4500 463229800 CHVBK 20180405153238.0 cr unu---uuuuu 170326e20070701xx s 000 0 eng 10.1007/s10853-006-1001-z doi (NATIONALLICENCE)springer-10.1007/s10853-006-1001-z Lucy Irine Department of Physics, University of Rajshahi, 6205, Rajshahi, Bangladesh aut Dielectric behavior of Cu-GeO2 cermet thin films [Elektronische Daten] [Irine Lucy] Capacitance and dielectric loss measurements were carried out using an Al/Cu-GeO2/Al sandwich structure for 0 to 10vol% Cu films, 120-400nm thick, deposited at 0.4-1.5nm/s in the frequency and temperature range 1-106Hz and 90-573K, respectively. The variation of capacitance and dielectric loss with frequency and temperature follows the Goswami and Goswami model. Capacitance decreases slowly with increasing thickness and also varies with the change in deposition rate of the cermet film. Springer Science+Business Media, LLC, 2007 Journal of Materials Science Kluwer Academic Publishers-Plenum Publishers; http://www.springer-ny.com 42/14(2007-07-01), 5875-5879 0022-2461 42:14<5875 2007 42 10853 https://doi.org/10.1007/s10853-006-1001-z text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10853-006-1001-z text/html Onlinezugriff via DOI NATIONALLICENCE 100 1- Lucy Irine Department of Physics, University of Rajshahi, 6205, Rajshahi, Bangladesh aut NATIONALLICENCE 773 0- Journal of Materials Science Kluwer Academic Publishers-Plenum Publishers; http://www.springer-ny.com 42/14(2007-07-01), 5875-5879 0022-2461 42:14<5875 2007 42 10853 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer