caa a22 4500 46322986X CHVBK 20180405153238.0 cr unu---uuuuu 170326e20070201xx s 000 0 eng 10.1007/s10853-006-1456-y doi (NATIONALLICENCE)springer-10.1007/s10853-006-1456-y Optical and electrical properties of obliquely deposited a-GeSe2 films [Elektronische Daten] [Priyamvada Bhardwaj, P. Shishodia, R. Mehra] Oblique deposition and exposure to photons of energy greater than the bandgap have a marked effect on the structure and consequently on electrical and optical properties of amorphous chalcogenides. This paper presents a detailed study of photoinduced effect and oblique deposition effect on electrical and optical properties of a-GeSe2 films deposited at different angles (0°-80°). The indirect-optical bandgap energy (2.18eV) was found to be independent of angle of incidence. The spectral response of refractive index and extinction coefficient has been determined in the wavelength range of 0.6-1μm using the transmission spectra. Refractive index decreases with the increase in angle of incidence. The value of refractive index was observed to be 2.28 for 0° and 2.00 for 80° films at 0.646μm. An increase in bandgap was also observed on exposure to the UV light for ∼120min. The change in bandgap became more significant with the increase in angle of incidence (∼ 2.3% for 0° and ∼10.6% for 80°). The temperature dependence of conductivity along with time dependence and spectral response of photocurrent has also been investigated. Springer Science+Business Media, LLC, 2007 Bhardwaj Priyamvada Department of Electronic Science, University of Delhi South Campus, Benito Juarez Road, 110021, New Delhi, India aut Shishodia P. Department of Physics & Electronics, Zakir Hussain College (University of Delhi), 110002, New Delhi, India aut Mehra R. Department of Electronic Science, University of Delhi South Campus, Benito Juarez Road, 110021, New Delhi, India aut Journal of Materials Science Kluwer Academic Publishers-Plenum Publishers; http://www.springer-ny.com 42/4(2007-02-01), 1196-1201 0022-2461 42:4<1196 2007 42 10853 https://doi.org/10.1007/s10853-006-1456-y text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10853-006-1456-y text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Bhardwaj Priyamvada Department of Electronic Science, University of Delhi South Campus, Benito Juarez Road, 110021, New Delhi, India aut NATIONALLICENCE 700 1- Shishodia P. Department of Physics & Electronics, Zakir Hussain College (University of Delhi), 110002, New Delhi, India aut NATIONALLICENCE 700 1- Mehra R. Department of Electronic Science, University of Delhi South Campus, Benito Juarez Road, 110021, New Delhi, India aut NATIONALLICENCE 773 0- Journal of Materials Science Kluwer Academic Publishers-Plenum Publishers; http://www.springer-ny.com 42/4(2007-02-01), 1196-1201 0022-2461 42:4<1196 2007 42 10853 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer