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   <subfield code="a">Properties of GaAs films deposited by pulse periodic technique</subfield>
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   <subfield code="a">GaAs is a III-V compound possessing high mobility and a direct band gap of 1.43eV , making it a very suitable candidate for photovoltaic applications. Thin GaAs films were prepared at room temperature by plating an aqueous solution containing GaCl3 and As2O3 at a pH of 2. The current density was kept as 50mAcm−2 and the duty cycle was varied in the range 10-50%. The films were deposited on titanium and tin oxide coated glass substrates. Films exhibited polycrystalline nature with peaks corresponding to single phase GaAs. Optical absorption measurements indicated a direct band gap of 1.40eV. The surface roughness of the films varied from 3nm to 6nm as the duty cycle increased. Raman spectra indicated both the LO and TO phonons for the films deposited at duty cycles above 25%. Photoelectrochemical studies indicated that the current and voltage output are higher than earlier reports on thin film electrodes.</subfield>
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