caa a22 4500 463230760 CHVBK 20180405153241.0 cr unu---uuuuu 170326e20070401xx s 000 0 eng 10.1007/s10853-006-1407-7 doi (NATIONALLICENCE)springer-10.1007/s10853-006-1407-7 Study of defect states in a-Se85Te15− x Pb x thin films by space charge limited conduction mechanism [Elektronische Daten] [V. Kushwaha, A. Kumar] Current-Voltage (I-V) characteristics have been studied at various temperatures in vacuum evaporated thin films of a-Se85Te15−x Pb x (x=0, 2, 4, 6) alloys. These characteristics show that, at low electric fields, an ohmic behaviour is observed. However, at high electric fields (E∼104V/cm), the current becomes superohmic. At high fields, in case of samples having 0 and 2at% of Pb, the experimental data fits well with the theory of space charge limited conduction (SCLC) in case of uniform distribution of localized states in the mobility gap. Such type of behaviour is not observed at higher concentration of Pb in the present glassy system due to high conductivity. In these samples, joule heating due to large currents may prohibit the measurement of SCLC. Using the theory of SCLC for the uniform distribution of the traps, the density of localized defect states near Fermi level is calculated for these compositions. The results indicate that the density of defect states near Fermi level increases on addition of Pb to binary Se85Te15alloy. This is explained in terms of electronegativity of Pb as compared to host elements. Springer Science+Business Media, LLC, 2006 Kushwaha V. Department of Physics, Harcourt Butler Technological Institute, 02, Kanpur, India aut Kumar A. Department of Physics, Harcourt Butler Technological Institute, 02, Kanpur, India aut Journal of Materials Science Kluwer Academic Publishers-Plenum Publishers; http://www.springer-ny.com 42/8(2007-04-01), 2712-2716 0022-2461 42:8<2712 2007 42 10853 https://doi.org/10.1007/s10853-006-1407-7 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10853-006-1407-7 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Kushwaha V. Department of Physics, Harcourt Butler Technological Institute, 02, Kanpur, India aut NATIONALLICENCE 700 1- Kumar A. Department of Physics, Harcourt Butler Technological Institute, 02, Kanpur, India aut NATIONALLICENCE 773 0- Journal of Materials Science Kluwer Academic Publishers-Plenum Publishers; http://www.springer-ny.com 42/8(2007-04-01), 2712-2716 0022-2461 42:8<2712 2007 42 10853 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer