caa a22 4500 463230817 CHVBK 20180405153241.0 cr unu---uuuuu 170326e20070401xx s 000 0 eng 10.1007/s10853-006-1340-9 doi (NATIONALLICENCE)springer-10.1007/s10853-006-1340-9 Characteristics of nanostructure and electrical properties of Ti thin films as a function of substrate temperature and film thickness [Elektronische Daten] [H. Savaloni, K. Khojier, M. Alaee] Titanium films of different thickness at different substrate temperatures are prepared using PVD method. The nanostructure of these films was obtained using X-ray diffraction (XRD) and AFM, while the thicknesses were measured by means of Rutherford back scattering (RBS) technique. Resistivity, Hall coefficient, concentration of carriers and the mobility in these films are obtained. The results show that, the rutile phase of TiO2 is formed which is initially amorphous and as the film thickness increases it tends to become textured in (020) direction, which is more pronounced at higher temperatures and possibly transforms to anatase TiO2 with (112) orientation for thickest films of 224nm. The conductivity and concentration of carriers increase with thickness, while the Hall coefficient and the mobility decrease. The activation energies in these samples were obtained from the Arrhenius plots of σ and R H. For thinner films ( $$ E_{\hbox{a}} \approx 0.4 - 0.6 $$ eV) and for thickest film (224nm) a break point is observed at about 500K, which is consistent with the idea of more processes becoming activated at higher temperatures. Springer Science+Business Media, LLC, 2006 Savaloni H. Department of Physics, University of Tehran, North-Kargar St., Tehran, Iran aut Khojier K. Plasma Physics Research Center, Science and Research Campus of Islamic Azad. University, P. O. Box 14665-678, Tehran, Iran aut Alaee M. Department of Physics, University of Tehran, North-Kargar St., Tehran, Iran aut Journal of Materials Science Kluwer Academic Publishers-Plenum Publishers; http://www.springer-ny.com 42/8(2007-04-01), 2603-2611 0022-2461 42:8<2603 2007 42 10853 https://doi.org/10.1007/s10853-006-1340-9 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10853-006-1340-9 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Savaloni H. Department of Physics, University of Tehran, North-Kargar St., Tehran, Iran aut NATIONALLICENCE 700 1- Khojier K. Plasma Physics Research Center, Science and Research Campus of Islamic Azad. University, P. O. Box 14665-678, Tehran, Iran aut NATIONALLICENCE 700 1- Alaee M. Department of Physics, University of Tehran, North-Kargar St., Tehran, Iran aut NATIONALLICENCE 773 0- Journal of Materials Science Kluwer Academic Publishers-Plenum Publishers; http://www.springer-ny.com 42/8(2007-04-01), 2603-2611 0022-2461 42:8<2603 2007 42 10853 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer