caa a22 4500 46323149X CHVBK 20180405153243.0 cr unu---uuuuu 170326e20071201xx s 000 0 eng 10.1007/s10853-007-1992-0 doi (NATIONALLICENCE)springer-10.1007/s10853-007-1992-0 Effects of oxygen pressure on the structure and photoluminescence of ZnO thin films [Elektronische Daten] [Changzheng Wang, Dongran Xu, Xiaoguang Xiao, Yiqing Zhang, Dong Zhang] A series of ZnO thin films were deposited on silicon (100) substrate at 473K by using facing target RF magnetron sputtering system at different oxygen pressure in this paper. The structure, surface morphology and photoluminescence of the ZnO thin films were characterized by X-ray diffraction, atomic force microscopy (AFM), and photoluminescence spectra (PL), respectively. The results showed that only a (002) peak of hexagonal wurtzite appeared in all ZnO thin films, indicating that ZnO films exhibited strong texture. With increasing the oxygen pressure, the results indicated that the ZnO film deposited at 1.2Pa Ar pressure and 0.6Pa oxygen pressure had the best preferential C-axis orientation and the weakest compressive stress. Meanwhile, AFM observation showed that ZnO film deposited at pure Ar had the highest surface roughness. With the increment of oxygen pressure, the surface roughness decreased gradually. In addition, PL measurement showed that the ZnO film deposited at 1.2Pa Ar pressure and 0.6Pa oxygen pressure had the strongest ultraviolet emission and the weakest blue emission. Springer Science+Business Media, LLC, 2007 Wang Changzheng School of Physics Science and Information Engineering, Liaocheng University, 252059, Liaocheng, Shandong Province, P.R. China aut Xu Dongran School of Physics Science and Information Engineering, Liaocheng University, 252059, Liaocheng, Shandong Province, P.R. China aut Xiao Xiaoguang School of Physics Science and Information Engineering, Liaocheng University, 252059, Liaocheng, Shandong Province, P.R. China aut Zhang Yiqing School of Physics Science and Information Engineering, Liaocheng University, 252059, Liaocheng, Shandong Province, P.R. China aut Zhang Dong School of Physics Science and Information Engineering, Liaocheng University, 252059, Liaocheng, Shandong Province, P.R. China aut Journal of Materials Science Springer US; http://www.springer-ny.com 42/23(2007-12-01), 9795-9800 0022-2461 42:23<9795 2007 42 10853 https://doi.org/10.1007/s10853-007-1992-0 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10853-007-1992-0 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Wang Changzheng School of Physics Science and Information Engineering, Liaocheng University, 252059, Liaocheng, Shandong Province, P.R. China aut NATIONALLICENCE 700 1- Xu Dongran School of Physics Science and Information Engineering, Liaocheng University, 252059, Liaocheng, Shandong Province, P.R. China aut NATIONALLICENCE 700 1- Xiao Xiaoguang School of Physics Science and Information Engineering, Liaocheng University, 252059, Liaocheng, Shandong Province, P.R. China aut NATIONALLICENCE 700 1- Zhang Yiqing School of Physics Science and Information Engineering, Liaocheng University, 252059, Liaocheng, Shandong Province, P.R. China aut NATIONALLICENCE 700 1- Zhang Dong School of Physics Science and Information Engineering, Liaocheng University, 252059, Liaocheng, Shandong Province, P.R. China aut NATIONALLICENCE 773 0- Journal of Materials Science Springer US; http://www.springer-ny.com 42/23(2007-12-01), 9795-9800 0022-2461 42:23<9795 2007 42 10853 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer