caa a22 4500 463232100 CHVBK 20180405153245.0 cr unu---uuuuu 170326e20070101xx s 000 0 eng 10.1007/s10853-006-1136-y doi (NATIONALLICENCE)springer-10.1007/s10853-006-1136-y The electrical and interface properties of metal-ferroelectric (lanthanum substituted bismuth titanate: BLT)-insulator-semiconductor (MFIS) structures with various insulators [Elektronische Daten] [S. Kang, W. Kim, S. Rhee] We have investigated metal-ferroelectric-insulator semiconductor (MFIS) structures with lanthanum substituted bismuth titanate (BLT) as a ferroelectric layer and lanthanum oxide (LO) or zirconium silicate (ZSO) as an insulating buffer layer between BLT and Si substrate. The morphology of BLT films deposited on LO or ZSO oxide was not changed due to the good thermal stability of LO and ZSO films. But an interface reaction between BLT and buffer layer started at high annealing temperature (750°C), which was confirmed by transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDS). The maximum memory window was 3.59V at a sweep voltage of 7V with the LO film annealed at 650°C and a thickness of 5nm. With BLT/LO annealed at 750°C, the window was decreased due to the reaction between the BLT film and LO. The memory window was about 1V lower with a ZSO film because ZSO film has a lower dielectric constant than LO film. The MFIS structure annealed at 750°C had a lower leakage current density because the electrical properties of the buffer layer (La oxide or Zr silicate) were improved by the thermal process. Springer Science+Business Media, LLC, 2006 Kang S. Laboratory for Advanced Materials Processing (LAMP), Electrical and Computer Engineering Division, Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), 790-784, Pohang, Korea aut Kim W. Laboratory for Advanced Materials Processing (LAMP), Electrical and Computer Engineering Division, Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), 790-784, Pohang, Korea aut Rhee S. Laboratory for Advanced Materials Processing (LAMP), Electrical and Computer Engineering Division, Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), 790-784, Pohang, Korea aut Journal of Materials Science Kluwer Academic Publishers-Plenum Publishers; http://www.springer-ny.com 42/2(2007-01-01), 652-659 0022-2461 42:2<652 2007 42 10853 https://doi.org/10.1007/s10853-006-1136-y text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10853-006-1136-y text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Kang S. Laboratory for Advanced Materials Processing (LAMP), Electrical and Computer Engineering Division, Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), 790-784, Pohang, Korea aut NATIONALLICENCE 700 1- Kim W. Laboratory for Advanced Materials Processing (LAMP), Electrical and Computer Engineering Division, Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), 790-784, Pohang, Korea aut NATIONALLICENCE 700 1- Rhee S. Laboratory for Advanced Materials Processing (LAMP), Electrical and Computer Engineering Division, Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), 790-784, Pohang, Korea aut NATIONALLICENCE 773 0- Journal of Materials Science Kluwer Academic Publishers-Plenum Publishers; http://www.springer-ny.com 42/2(2007-01-01), 652-659 0022-2461 42:2<652 2007 42 10853 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer