caa a22 4500 463232895 CHVBK 20180405153247.0 cr unu---uuuuu 170326e20070701xx s 000 0 eng 10.1007/s10853-006-1288-9 doi (NATIONALLICENCE)springer-10.1007/s10853-006-1288-9 Proximity-effect correction in electron-beam lithography on metal multi-layers [Elektronische Daten] [Hyunjung Yi, Joonyeon Chang] We report a proximity-effect correction in electron beam patterning when fabricating a spin valve device with a junction size of 100nm×100nm. Since the spin valve device has a stack of magnetic/non-magnetic/magnetic metal multi-layers on oxidized Si substrate, its proximity effect should be appropriately corrected to realize a nano-scale junction. ZEP 520A was chosen as an electron beam resist because its dry-etching resistance is high enough to serve as an etching mask in the post-process. A set of proximity parameters, α, β, and η of ZEP 520A coated metal multi-layers was evaluated by using the doughnut pattern method. A simulation was carried out based on given proximity parameters in order to obtain effective dose factors of each segment of the exposure pattern. The junction with a desired shape and size on a metal multi-layer was successfully fabricated with a help of efficient proximity-effect correction. Springer Science+Business Media, LLC, 2007 Yi Hyunjung Center for Spintronics Research, Nano-Science Research Division, Korea Institute of Science and Technology, Cheongryang, P.O.Box 131, 130-650, Seoul, Korea aut Chang Joonyeon Center for Spintronics Research, Nano-Science Research Division, Korea Institute of Science and Technology, Cheongryang, P.O.Box 131, 130-650, Seoul, Korea aut Journal of Materials Science Kluwer Academic Publishers-Plenum Publishers; http://www.springer-ny.com 42/13(2007-07-01), 5159-5164 0022-2461 42:13<5159 2007 42 10853 https://doi.org/10.1007/s10853-006-1288-9 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10853-006-1288-9 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Yi Hyunjung Center for Spintronics Research, Nano-Science Research Division, Korea Institute of Science and Technology, Cheongryang, P.O.Box 131, 130-650, Seoul, Korea aut NATIONALLICENCE 700 1- Chang Joonyeon Center for Spintronics Research, Nano-Science Research Division, Korea Institute of Science and Technology, Cheongryang, P.O.Box 131, 130-650, Seoul, Korea aut NATIONALLICENCE 773 0- Journal of Materials Science Kluwer Academic Publishers-Plenum Publishers; http://www.springer-ny.com 42/13(2007-07-01), 5159-5164 0022-2461 42:13<5159 2007 42 10853 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer