caa a22 4500 463233204 CHVBK 20180405153248.0 cr unu---uuuuu 170326e20070701xx s 000 0 eng 10.1007/s10853-006-0604-8 doi (NATIONALLICENCE)springer-10.1007/s10853-006-0604-8 Microstructures and dielectric properties of Y/Zn codoped BaTiO3 ceramics [Elektronische Daten] [Bo Li, Shuren Zhang, Xiaohua Zhou, Zhu Chen, Sheng Wang] The microstructures and dielectric properties of Y/Zn codoped BaTiO3 ceramics sintered in a reducing atmosphere were investigated. XRD analysis indicated the crystal structure of samples change from tetragonal to pseudocubic with increasing Y2O3 and ZnO content. SEM micrographs showed Y2O3 can suppress grain growth more effectively compared with ZnO, which is ascribed to the presence of second phase Y2Ti2O7. Proper amount of Y2O3 and ZnO can significantly improve the dielectric temperature characteristics due to the formation of grain core-shell structure. The high performance dielectrics meeting the X7R code were achieved by codoping 1.5mol% Y2O3 and 3.0mol% ZnO. Springer Science+Business Media, LLC, 2007 Li Bo School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, 610054, Chengdu, P.R. China aut Zhang Shuren School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, 610054, Chengdu, P.R. China aut Zhou Xiaohua School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, 610054, Chengdu, P.R. China aut Chen Zhu School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, 610054, Chengdu, P.R. China aut Wang Sheng School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, 610054, Chengdu, P.R. China aut Journal of Materials Science Kluwer Academic Publishers-Plenum Publishers; http://www.springer-ny.com 42/13(2007-07-01), 5223-5228 0022-2461 42:13<5223 2007 42 10853 https://doi.org/10.1007/s10853-006-0604-8 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10853-006-0604-8 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Li Bo School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, 610054, Chengdu, P.R. China aut NATIONALLICENCE 700 1- Zhang Shuren School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, 610054, Chengdu, P.R. China aut NATIONALLICENCE 700 1- Zhou Xiaohua School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, 610054, Chengdu, P.R. China aut NATIONALLICENCE 700 1- Chen Zhu School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, 610054, Chengdu, P.R. China aut NATIONALLICENCE 700 1- Wang Sheng School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, 610054, Chengdu, P.R. China aut NATIONALLICENCE 773 0- Journal of Materials Science Kluwer Academic Publishers-Plenum Publishers; http://www.springer-ny.com 42/13(2007-07-01), 5223-5228 0022-2461 42:13<5223 2007 42 10853 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer