caa a22 4500 463233573 CHVBK 20180405153249.0 cr unu---uuuuu 170326e20070601xx s 000 0 eng 10.1007/s10853-006-0416-x doi (NATIONALLICENCE)springer-10.1007/s10853-006-0416-x Substitution site effect on structural and dielectric properties of La-Bi modified PZT [Elektronische Daten] [Puja Goel, K. Yadav] Substitution site effect of (La:Bi) on the structural and dielectric properties of chemically prepared PZT system Pb0.92 (La1−x Bi x ) 0.08(Zr0.65Ti0.35)0.98O3 [(a) x=0.0, (b) x=0.1, (c) x=0.2, (d) x=0.3, (e) x=0.4 and (f) x=1.0] have been studied. The samples were prepared by employing a simple co-precipitation technique using nitrates of lead, lanthanum, bismuth, zirconium and titanium isopropoxide. X-ray diffraction studies confirm the formation of phase pure and homogeneous ceramics of rhombohedral symmetry without bismuth addition and a tetragonal symmetry was confirmed for the compounds containing bismuth due to the presence of a doublet (200) peak in these compounds. Scanning electron micrographs shows a uniform grain distribution and the grain size and shape were modified upon bismuth addition. Increase in Bi content causes a decrease in average grain size of the material. Dielectric measurements demonstrate a diffuse type of phase transition and this diffuseness decreases with increasing Bi ion concentration. Composition (A) only showed relaxor type of behaviour. Variation of dielectric constant with temperature shows that both T c and εmax increases with increase of Bi concentration. This was explained on the basis of favorable B-site substitution of Bi+3 ions and therefore the increased strength of spontaneous polarization. Finally, it is evident that the type of substitution site also has a significant effect on the dielectric properties of the PZT system. All these results suggest that the synthesized ceramics may be suitable for device applications. Springer Science+Business Media, LLC, 2007 Goel Puja Smart Materials Research Laboratory, Department of Physics, Indian Institute of Technology, 247667, Roorkee, Uttaranchal, India aut Yadav K. Smart Materials Research Laboratory, Department of Physics, Indian Institute of Technology, 247667, Roorkee, Uttaranchal, India aut Journal of Materials Science Kluwer Academic Publishers-Plenum Publishers; http://www.springer-ny.com 42/11(2007-06-01), 3928-3935 0022-2461 42:11<3928 2007 42 10853 https://doi.org/10.1007/s10853-006-0416-x text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10853-006-0416-x text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Goel Puja Smart Materials Research Laboratory, Department of Physics, Indian Institute of Technology, 247667, Roorkee, Uttaranchal, India aut NATIONALLICENCE 700 1- Yadav K. Smart Materials Research Laboratory, Department of Physics, Indian Institute of Technology, 247667, Roorkee, Uttaranchal, India aut NATIONALLICENCE 773 0- Journal of Materials Science Kluwer Academic Publishers-Plenum Publishers; http://www.springer-ny.com 42/11(2007-06-01), 3928-3935 0022-2461 42:11<3928 2007 42 10853 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer